A capacitance model is developed and a correction formula is derived to reconstruct the intrinsic oxide capacitance value from measured capacitance and conductance of lossy MOS devices. Due to discrepancies during processing, such as cleaning, an unwanted lossy dielectric layer is present in the oxide/semiconductor interface causing the measured capacitance in strong accumulation to be frequency dependent. The capacitance-voltage characteristics after correction are free from any frequency dispersion effect and give the actual oxide thickness in accumulation at all frequencies. Simulation of the measured capacitance-frequency curve was carried out using the model. The model was applied to SiO 2 /Si, SiO 2 /strained Si and GaO 2 /GaAs MOS capacitors.

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A simple active-matrix organic light-emitting diode (AMOLED) pixel with conventional voltage driving and ability to compensate for the V th shift of thin-film transistors (TFTs) is proposed. The stable pixel operation is achieved by the employment of a dual-gate TFT for OLED driving. Simulation results also show that a new pixel exhibits almost linear programming I -V characteristics, whereas a conventional pixel design features a highly nonlinear behaviour.Introduction: Displays with active-matrix organic light-emitting diodes (AMOLEDs) are considered as the next generation display technology because of their superb image quality, digital addressing, self-emissive nature and low energy consumption [1]. A conventional AMOLED pixel has two thin-film transistors (TFTs) for switching and driving and one capacitor (2T1C). If subjected to a prolonged gate bias stress, the widely used TFTs including CdSe, amorphous and/or polysilicon devices are prone to electrical instabilities, most notably the positive V th shift [2]. If not compensated for, this shift will yield to a substantial OLED current degradation and the pixel brightness decay. So far, several V th compensation methods in 2TC1 pixels [3-5] have been described, but they require either non-conventional complex voltage driving schemes [3,5] or an excessively long programming period [4]. In this Letter, a novel V th shift compensated 2T1C pixel is proposed, which maintains a conventional voltage driving scheme for compatibility with well developed LCD display driver ICs.

This letter presents first-ever fabricated GaN split-current magnetic sensor device. Device operation and key manufacturing steps are also presented. The measured relative current sensitivity is constant at 14 % T-1 for wide mT range of the magnetic field. Constant sensitivity of a fabricated sensor can be attributed to device's 2DEG nature, i.e. its high electron concentration and mobility, and very small layer thickness.

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