A low-power CMOS RF power detector

Sakphrom, Siraporn; Thanachayanont, A.

doi:10.1109/icecs.2012.6463771

Cited by 18 publications

(12 citation statements)

References 9 publications

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“…2. Schematic of the RMS power detector [5] In this paper, a wide input frequency range power detector has been presented. To cancel the offset error and increase the input frequency, we propose to use half of RMS power detector to convert the input amplitude into a DC voltage, namely amplitude-to-voltage convertor (AVC).…”

Section: Introductionmentioning

confidence: 99%

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A 20 GHz power detector with 176 mV/dB conversion gain

Wangt

Wang

Chen

et al. 2014

2014 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)

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This paper introduces a high frequency power detector with high conversion gain for frequency-shift applications. The proposed design comprises an amplitude-to-voltage convertor (AVC), a peak detector, and a bandgap. To increase the operating frequency range, AVC utilizes the half of an RMS power detector to attain the power measure of an input signal. Since the input power is converted to a DC voltage by AVC, the peak detector will secure the resonant frequency when AVC generates the highest voltage. The proposed power detector circuit is realized on silicon using a 60 V 0.25 μm CMOS technology. The post-layout simulation result shows that the proposed circuit is able to detect input frequency from 500 Hz to 20 GHz, and the conversion gain of AVC is 176 mV/dB, while the power consumption is 20 mW given a 5 V power supply voltage.

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Section: Introductionmentioning

confidence: 99%

“…Since the peak detector includes OPA or OTA, it is limited in the low frequency range. The other type is RMS power detector, as shown in Fig.2 [5]. Although RMS power detectors can operate in high frequency range, but it has the offset error problem and the output voltage resolution, V diff , is too small [6].…”

Section: Introductionmentioning

confidence: 99%

A 20 GHz power detector with 176 mV/dB conversion gain

Wangt

Wang

Chen

et al. 2014

2014 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)

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“…Significant research is in progress to realize radio frequency (RF) power sensors or detectors operating in narrow band, broadband, and UWB frequency spectrum. Almost all of the reported microelectronics-based RF power-sensing schemes depend on the nonlinear characteristics of CMOS [ 7 ], BJT [ 8 ], Schottky diodes [ 9 ], thermistor [ 9 ], thermocouple [ 9 ], and current-mode computational circuits [ 10 ]. A MEMS capacitive bridge-beam type power sensor operating in the 100 kHz–4 GHz range has been reported in [ 11 ].…”

Section: Introductionmentioning

confidence: 99%

A MEMS Ultra-Wideband (UWB) Power Sensor with a Fe-Co-B Core Planar Inductor and a Vibrating Diaphragm Capacitor

Vejella

Chowdhury

2021

Sensors

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The design of a microelectromechanical systems (MEMS) ultra-wideband (UWB) RMS power sensor is presented. The sensor incorporates a microfabricated Fe-Co-B core planar inductor and a microfabricated vibrating diaphragm variable capacitor on adhesively bonded glass wafers in a footprint area of 970 × 970 µm2 to operate in the 3.1–10.6 GHz UWB frequency range. When exposed to a far-field UWB electromagnetic radiation, the planar inductor acts as a loop antenna to generate a frequency-independent voltage across the MEMS capacitor. The voltage generates a coulombic attraction force between the diaphragm and backplate that deforms the diaphragm to change the capacitance. The frequency-independent capacitance change is sensed using a transimpedance amplifier to generate an output voltage. The sensor exhibits a linear capacitance change induced voltage relation and a calculated sensitivity of 4.5 aF/0.8 µA/m. The sensor can be used as a standalone UWB power sensor or as a 2D array for microwave-based biomedical diagnostic imaging applications or for non-contact material characterization. The device can easily be tailored for power sensing in other application areas such as, 5G, WiFi, and Internet-of-Things (IoT). The foreseen fabrication technique can rely on standard readily available microfabrication techniques.

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“…The detection of the PDs in [3] is realized by the emitter-base junction of a BJT and the rectified collector current is amplified through a PMOS current mirror, showing a measured dynamic range of 30-dB for millimeter-wave automatic level control usage. Logarithmic amplifier based detectors exhibit large dynamic range and linear-in-dB response, which are highly desirable in radio frequency systems [7,8,9,10,11]. Implemented in 0.13μm CMOS process, the power detector in [7] combines three signal amplification and rectification branches in parallel for broadband operation over 43-dB dynamic range up to 14 GHz.…”

Section: Introductionmentioning

confidence: 99%

A 55-dB dynamic range wideband RF logarithmic power detector with temperature and DC offset compensation

Jiang

Zhang

et al. 2021

IEICE Electron. Express

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A wideband RF logarithmic power detector with large dynamic range is presented in this work. The power detector fabricated in 180-nm SiGe process employs the successive approximation technique over a 6stage cascaded amplifier chain. A cross-coupled cascode amplifier architecture is proposed to expand bandwidth up to 8GHz. With a temperature compensation circuit and a DC offset compensation loop, the detector provides consistent logarithmic performance at different temperatures in band, which can be applied in highly reliable RF systems. The measured input dynamic range is larger than 50dB in 1MHz~8GHz with less than ±1dB error and 55dB at 8GHz with less than ±3dB error. The measured temperature drift is less than ±1.0dB at 5GHz over the temperature range from -40 to 85℃.

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A low-power CMOS RF power detector

Cited by 18 publications

References 9 publications

A 20 GHz power detector with 176 mV/dB conversion gain

A 20 GHz power detector with 176 mV/dB conversion gain

A MEMS Ultra-Wideband (UWB) Power Sensor with a Fe-Co-B Core Planar Inductor and a Vibrating Diaphragm Capacitor

A 55-dB dynamic range wideband RF logarithmic power detector with temperature and DC offset compensation

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