A low power high performance PLL with temperature compensated VCO in 65nm CMOS

Ravinuthula, Vishnu; Finocchiaro, Salvatore

doi:10.1109/rfic.2016.7508243

Cited by 11 publications

(3 citation statements)

References 5 publications

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“…It can be seen that the temperature drift characteristics of VCO can be effectively reduced by using dual inductances. In parallel inductance mode, the L-T curve shows a negative temperature coefficient, while in single inductance mode, the L-T curve shows a positive temperature coefficient [7,8,9]. The curve of the capacitance varies with temperature shows a positive temperature trend.…”

Section: Vco Designmentioning

confidence: 98%

A new method to improve the phase noise performance of the frequency synthesizer for UHF RFID

Liu

Chai

Liu

2019

IEICE Electron. Express

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This paper presents a fractional-N frequency synthesizer for ultra high frequency radio frequency identification (UHF RFID) reader application. With the use of a novel parallel dual inductance resonator in the inductance and capacitance based voltage-controlled oscillator (LC_VCO), the resonator cavity loss was greatly reduced as well as the temperature drift was suppressed. At the same time, the loop linearity is improved by the use of operational amplifier tracking technology. The chip is fabricated in a 0.13 µm RF CMOS technology with a single 1.2 V power supply. The synthesizer provides a tuning range from 840 MHz to 960 MHz. The worst phase noise of −95 dBc/Hz in band, −110 dBc/Hz@100 kHz offset, −135 dBc/Hz@1 MHz offset with a reference spur of −78 dBc are measured at a center frequency of 920.125 MHz. A 0.95 ps integrated RMS jitter and an 18.5 mW power dissipation are obtained at a temperature range from −40°C to 85°C.

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Section: Vco Designmentioning

confidence: 98%

A new method to improve the phase noise performance of the frequency synthesizer for UHF RFID

Liu

Chai

Liu

2019

IEICE Electron. Express

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“…Equivalent circuit of the spiral inductor [13] where, µ0 is the vacuum permeability, N is the number of inductor turns, a is the distance from the center of the inductor to the middle of the windings and D is the diameter of windings. The values of capacitors can be obtained from (10), (11) and 12 where, W, L, N, Csub, ε ox , and t ox are metal width, total length of the spiral, number of turns, body capacitance, silicon di oxide electrical permittivity and thickness of the oxide, respectively.…”

Section: 1 Inductor Capacitorsmentioning

confidence: 99%

“…Several methods are proposed to compensate frequency drift over temperature [6]- [11]. Placing VCO in a synthesizer loop is a solution for this problem [12].…”

Section: Introductionmentioning

confidence: 99%

A Temperature Compensation Voltage Controlled Oscillator Using a Complementary to Absolute Temperature Voltage Reference

Katebi

Nasri

Toofan

et al. 2019

IJE

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T his paper presents a temperature compensation voltage controlled oscillator (VCO) based on Cross-Coupled pair and Colpitts structures which is suitable for military fields. Also, two inductors have been used for increasing the negative conductance. By using this method, start-up condition has been improved. Two varactors and a simple capacitor bank are applied for covering a wide tunning range. T he VCO has been designed and simulated in T SMC 0.18 µm CMOS technology.To compensate the frequency drift over a temperature range, MOS varactors are used and biased with a complementary to absolute temperature (CTAT) voltage reference. This CT AT voltage reference has been applied to two varactors and decreased the frequncy drift over temperature range. By using this technique, the proposed VCO can achieve a very stable frequency of 11.5 PPM/°C at 24.35 GHz over a temperature range of-40~120 °C. Simulation results also show the VCO covers the frequency range of 23.75~24.8 GHz. T he simulated phase noise of center frequency is-102.6 dBc/Hz at 1 MHz offset frequency. T he VCO consumes 10.4 mW DC power under 1.8 V supply voltage. The figure of merit of the VCO is-179.8 after compensating.

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A 1.8 GHz temperature drift compensated LC-VCO for RFID transceiver

Liu

Chai

2020

Analog Integr Circ Sig Process

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A low power high performance PLL with temperature compensated VCO in 65nm CMOS

Cited by 11 publications

References 5 publications

A new method to improve the phase noise performance of the frequency synthesizer for UHF RFID

A new method to improve the phase noise performance of the frequency synthesizer for UHF RFID

A Temperature Compensation Voltage Controlled Oscillator Using a Complementary to Absolute Temperature Voltage Reference

A 1.8 GHz temperature drift compensated LC-VCO for RFID transceiver

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