A 1.8 GHz temperature drift compensated LC-VCO for RFID transceiver

Liu, Qingshan; Chai, Changchun

doi:10.1007/s10470-020-01694-x

Cited by 3 publications

(3 citation statements)

References 11 publications

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“…So, in order to achieve desirable frequency stability, using compensation techniques [4,5] is mandatory. Thus, several researches have been devoted to effective compensation of the CMOS oscillators [4,[6][7][8][9][10][11][12][13]. Considering the type of application that oscillator is designed for, the appropriate compensation technique is developed.…”

Section: Introductionmentioning

confidence: 99%

“…Although the temperature coefficient (TC) of the VCO and its phase noise are acceptable, its high-power consumption and chip area (due to use of inductors) are not appropriate for biomedical devices. An LC VCO used in an RFID system is also thermally compensated with using an auxiliary varactor loop in a PLL configuration [11]. The proposed method provides adequate frequency stability, but occupies more area because of using several inductors.…”

Section: Introductionmentioning

confidence: 99%

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Ultra Low Power Temperature Compensated Complementary Metal Oxide Semiconductor Ring Oscillator in Subthreshold

Sadeghi

Ebrahimi

2023

IJE

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Low power consumption, low chip area and fabrication in the standard complementary metal oxide semiconductor (CMOS) process are vital requirements for oscillators used in low-cost bio-implantable and wearable devices. Conventional ring oscillators (ROs) are good candidates for using in biomedical applications. However, their oscillation frequency strongly depends on the temperature. In this study, a temperature compensated ring oscillator with low power consumption is proposed. The transistors of the proposed ring oscillator operate in the subthreshold region to achieve a low power and low voltage performance. Since, in the subthreshold region, the oscillation frequency of a conventional ring oscillator increases with increase in the temperature, two current sources are used to power the proposed subthreshold ring oscillator: a temperature independent current source and a complementary to absolute temperature (CTAT) current source. In the proposed circuit, the CTAT current forms a small part of the total supplied current and its duty is to compensate for the oscillation frequency deviation. Two prototypes of the subthreshold ring oscillator were designed and simulated for a target frequency of 1MHz using commercially available 0.18µm RF-CMOS technology. The thermal coefficient (TC) of the uncompensated ring oscillator was 2400 ppm/ºC from -40ºC to 85ºC, though applying the proposed technique reduces the TC of the ring oscillator to 80.4 ppm/ºC with total power consumption as low as 14.5µW.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Ultra Low Power Temperature Compensated Complementary Metal Oxide Semiconductor Ring Oscillator in Subthreshold

Sadeghi

Ebrahimi

2023

IJE

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“…In [8], a passive LC-VCO with a low temperature coefficient is achieved using an additional PLL loop filter and auxiliary varactors. However, the analyzed temperature range is limited to 80 • C. Besides, passive inductors and the high values of resistors and capacitors are a limiting factor for certain technology nodes and considerably increase the silicon surface.…”

Section: Introductionmentioning

confidence: 99%

A General gm/Id Temperature-Aware Design Methodology Using 180 nm CMOS up to 250 °C

Martins

Alvès

Ferreira

2022

JICS

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The advent of the Internet-of-Things brings new challenges in circuit design. The presence of circuits and sensors in harsh environments brought the need for methodologies that account for them. Since the beginning of the transistors, the temperature is known for having a significant impact on performance, and even though very low temperature sensitivity circuits have been proposed, no general methodology for designing them exists. This paper proposes a general gm over Id technique for designing temperature-aware circuits that can be used either on measurement data, analytically, or based on simulation models. This model is validated using measurements up to 250°C of X-FAB XT018 transistors and later with a circuit design example.

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A 237 ppm/°C L-Band Active Inductance Based Voltage Controlled Oscillator in SOI 0.18 µm

Martins

Alvès

Ferreira

2021

2021 34th SBC/SBMicro/IEEE/ACM Symposium on Integrated Circuits and Systems Design (SBCCI)

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Multi-frequency receivers have become a standard for Global Navigation Satellite Systems ( GNSS ) and Global Positioning Systems ( GPS ) applications. In smart vehicle applications, multi-frequency receivers need to work reliably in a large temperature variation. Even though literature has presented solutions for frequency stability over temperature, they usually rely on external control circuits or non-silicon solutions such as wide-bandgap materials or MEMS resonators, leading to higher production costs. This work proposes a temperatureaware design of an active-inductor-based, MOSFET only, voltagecontrolled oscillator suitable for the L-Band. The temperature analysis is made based on a gm/ID methodology for the transistor biasing and MOSFET capacitors. Those analyses are validated from simulation models (-40 • C to 175 • C) and transistor measurements up to 200 • C. Monte-Carlo post-layout simulations present a mean first-order temperature coefficient of 237 ppm/ • C and cover the entire L-Band.

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A 1.8 GHz temperature drift compensated LC-VCO for RFID transceiver

Cited by 3 publications

References 11 publications

Ultra Low Power Temperature Compensated Complementary Metal Oxide Semiconductor Ring Oscillator in Subthreshold

Ultra Low Power Temperature Compensated Complementary Metal Oxide Semiconductor Ring Oscillator in Subthreshold

A General gm/Id Temperature-Aware Design Methodology Using 180 nm CMOS up to 250 °C

A 237 ppm/°C L-Band Active Inductance Based Voltage Controlled Oscillator in SOI 0.18 µm

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