A Low-Power Nonvolatile Switching Element Based on Copper-Tungsten Oxide Solid Electrolyte

Kozicki, Michael; Gopalan, C.; Balakrishnan, M.; Mitkova, M.

doi:10.1109/tnano.2006.880407

Cited by 207 publications

(130 citation statements)

References 25 publications

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“…[ 17 ] Recent results have shown promising device behaviors, such as reversible, non-volatile, fast ( < 10 ns), lowpower ( ∼ 1 pJ/operation) and multiple-state switching, [18][19][20][21][22][23][24][25][26] which are suitable for applications in non-volatile random access memory (NVRAM), [27][28][29][30] synaptic computing, [ 31 ] and other circuit families. [32][33][34][35] Among different types of resistance switches, metal/ oxide/metal junctions are one of the most extensively studied.…”

Section: Diffusion Of Adhesion Layer Metals Controls Nanoscale Memrismentioning

confidence: 99%

Diffusion of Adhesion Layer Metals Controls Nanoscale Memristive Switching

et al. 2010

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Section: Diffusion Of Adhesion Layer Metals Controls Nanoscale Memrismentioning

confidence: 99%

Diffusion of Adhesion Layer Metals Controls Nanoscale Memristive Switching

et al. 2010

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“…1,2 The ECM cell consists of an insulator layer sandwiched between two electrodes, in which one is made from an electrochemically active electrode (AE) metal, such as Ag or Cu, and the other is a counter electrode (CE), such as Pt, Ir, W, or Ag. 3,4 Till now, a large number of ECM cells have been reported, employing various insulating materials such as chalcogenides, [5][6][7][8][9][10][11][12][13] oxides, [14][15][16][17][18][19][20][21][22][23][24] amorphous Si (Refs. 25 and 26) and C, [27][28][29][30] and organic materials.…”

Section: Introductionmentioning

confidence: 99%

Mechanism for resistive switching in chalcogenide-based electrochemical metallization memory cells

Zhuge

et al. 2015

AIP Advances

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It has been reported that in chalcogenide-based electrochemical metallization (ECM) memory cells (e.g., As2S3:Ag, GeS:Cu, and Ag2S), the metal filament grows from the cathode (e.g., Pt and W) towards the anode (e.g., Cu and Ag), whereas filament growth along the opposite direction has been observed in oxide-based ECM cells (e.g., ZnO, ZrO2, and SiO2). The growth direction difference has been ascribed to a high ion diffusion coefficient in chalcogenides in comparison with oxides. In this paper, upon analysis of OFF state I–V characteristics of ZnS-based ECM cells, we find that the metal filament grows from the anode towards the cathode and the filament rupture and rejuvenation occur at the cathodic interface, similar to the case of oxide-based ECM cells. It is inferred that in ECM cells based on the chalcogenides such as As2S3:Ag, GeS:Cu, and Ag2S, the filament growth from the cathode towards the anode is due to the existence of an abundance of ready-made mobile metal ions in the chalcogenides rather than to the high ion diffusion coefficient.

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“…This is well known for resistively switching electrochemical metallization cells and reflects the drift of Cu ions through the amorphous aluminum oxide layer, the cathodic reduction, and growth of Cu filaments toward the anode. [14][15][16][17] First results of further control experiments with an aqueous solution of CuSO 4 top electrode suggest that aluminum oxide represents the electrolyte which mediates a Cu ion based electrochemical switching.…”

mentioning

confidence: 99%

On the origin of bistable resistive switching in metal organic charge transfer complex memory cells

Kever

Böttger

Schindler

et al. 2007

Applied Physics Letters

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Electrical characteristics of Cu:tetracyanoquinodimethane (TCNQ) devices with different electrodes were studied. The comparison of impedance spectroscopic measurements on devices with Al and Pt top electrodes proved the existence of a high resistive interface layer between Cu:TCNQ and Al. An equivalent circuit was modeled and the resulting values suggest that the interface layer is composed of naturally formed aluminum oxide. Devices with deliberately formed aluminum oxide and without Cu:TCNQ were fabricated and revealed a similar behavior. The authors propose that the switching effect in Cu:TCNQ thin film devices is a Cu ion based electrochemical effect occurring in a thin aluminum oxide layer.

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A Low-Power Nonvolatile Switching Element Based on Copper-Tungsten Oxide Solid Electrolyte

Cited by 207 publications

References 25 publications

Diffusion of Adhesion Layer Metals Controls Nanoscale Memristive Switching

Diffusion of Adhesion Layer Metals Controls Nanoscale Memristive Switching

Mechanism for resistive switching in chalcogenide-based electrochemical metallization memory cells

On the origin of bistable resistive switching in metal organic charge transfer complex memory cells

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