A Low-Power SiGe BiCMOS 190-GHz Receiver With 47-dB Conversion Gain and 11-dB Noise Figure for Ultralarge-Bandwidth Applications

Fritsche, David; Tretter, Gregor; Stärke, Paul; Carta, Corrado; Ellinger, Frank

doi:10.1109/tmtt.2017.2698438

Cited by 23 publications

(11 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In our case, we found the NF of single stage LNA of 3.3-4.8 dB, which makes it relevant and useful. A circuit of 190 GHz receiver is designed using LNA and integrated in a 130 nm SiGe BiCMOS technology [33].…”

Section: Resultsmentioning

confidence: 99%

Low Noise Amplifier using Darlington Pair At 90nm Technology

Singh¹,

Mehra²

2018

IJECE

View full text Add to dashboard Cite

<p class="Abstract"><span>The demand of low noise amplifier (LNA) has been rising in today’s communication system. LNA is the basic building circuit of the receiver section satellite. The design concept demonstrates the design trade off with NF, gain, power consumption. This paper reports on with analysis of wideband LNA. This paper shows the schematic of LNA by using Darlington pair amplifier. This LNA has been fabricated on 90nm CMOS process. This paper is focused on to make comparison of three stage and single stage LNA. Here, the phase mismatch between these patameters is quantitavely analyzed to study the effect on gain and noise figure (NF). In this paper, single stage LNA has shown the 23 dB measured gain, while the three stages LNA has demonstrated 29 dB measured gain. Here, LNA designed using darlington pair shows low NF of 3.3-4.8 dB, which comparable to other reported single stage LNA designs and appreciably low compared to the three stages LNA. Hence, findings from this paper suggest the use of single stage LNA designed using Darlington pair in transceiver satellite applications.</span></p>

show abstract

Section: Resultsmentioning

confidence: 99%

Low Noise Amplifier using Darlington Pair At 90nm Technology

Singh¹,

Mehra²

2018

IJECE

View full text Add to dashboard Cite

show abstract

“…Based on the amplifier and on the mixer, which were described in the previous sections, a complete receiver frontend has been designed [29]. Its architecture and a chip photograph are shown in Figure 7.…”

Section: Ghz Bicmos Receiver Frontendmentioning

confidence: 99%

Review of Millimeter-Wave Integrated Circuits With Low Power Consumption for High Speed Wireless Communications

et al. 2016

Self Cite

View full text Add to dashboard Cite

In this paper we review high-speed radiofrequency integrated circuits operating up to 210 GHz and present selected state-of-the-art circuits with leading-edge performance, which we have designed at our chair. The following components are discussed employing bipolar complementary metal oxide semiconductors (BiCMOS) technologies: a 200 GHz amplifier with 17 dB gain and around 9 dB noise figure consuming only 18 mW, a 200 GHz down mixer with 5.5 dB conversion gain and 40 mW power consumption, a 190 GHz receiver with 47 dB conversion gain and 11 dB noise figure and a 60 GHz power amplifier with 24.5 dBm output power and 12.9 % power added efficiency (PAE). Moreover, we report on a singlecore flash CMOS analogue-to-digital converter (ADC) with 3 bit resolution and a speed of 24 GS/s. Finally, we discuss a 60 GHz on-off keying (OOK) BiCMOS transceiver chip set. The wireless transmission of data with 5 Gb/s at 42 cm distance between transmitter and receiver was verified by experiments. The complete transceiver consumes 396 mW.

show abstract

“…In recent years, the rapid development of silicon-based technology has provided a low-cost solution to applications operating in the millimetre wave (MMW) and sub-THz frequency ranges (>100 GHz), such as high-data-rate wireless communication, imaging, radar and medical instruments [1][2][3][4][5][6][7][8]. SiGe-based systems with outstanding performance have attracted widespread attention and become a good substitute for their III-V semiconductor counterparts.…”

Section: Introductionmentioning

confidence: 99%

“…Several MMW receivers have been reported and could be classified into two categories: the harmonic-mixer-based receiver [1,2] and the fundamental-mixer-based receiver [3][4][5][6][7][8]. The harmonic-mixer structure relieves the demand of local oscillator (LO) at the expense of poor conversion gain (CG) and NF [2].…”

Section: Introductionmentioning

confidence: 99%

“…The harmonic-mixer structure relieves the demand of local oscillator (LO) at the expense of poor conversion gain (CG) and NF [2]. The fundamental mixer structure exhibits the advanced RF performance if the LO power is sufficient to implement the saturated switching of the mixing core [3][4][5][6]. Recently, on-chip multiplier chains in the advanced SiGe process have been demonstrated to generate >5 dBm output power up to 200 GHz, which is high enough to drive the active fundamental mixers [4,6].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Compact low‐power 154 GHz receiver front‐end in 0.13 µm SiGe BiCMOS

Chen

et al. 2020

IET Microwaves, Antennas & Propagation

View full text Add to dashboard Cite

This study presents a compact 154 GHz receiver fabricated in a 0.13 µm SiGe BiCMOS process, which is composed of a three‐stage low‐noise amplifier and an improved micromixer. In order to mitigate the intrinsic DC and RF imbalance of the basic micromixer, the resistor compensation is implemented at one branch of the RF paths, which achieves superior performance. Consisting of a common‐emitter and two differential cascade stages, the separate low‐noise amplifier achieves a small‐signal gain of 21.8 dB at 155 GHz with a 3 dB bandwidth of 22 GHz. The entire receiver exhibits a maximum conversion gain of 23.8 dB at 154 GHz with a 3 dB bandwidth of 16.5 GHz. The minimum single‐sideband noise figure is measured to be 11.4 dB at 149 GHz and remains below 15 dB from 142 to 160 GHz. Exhibiting high gain, low‐noise figure and considerably high bandwidth, the characterised receiver consumes competitive low power of 70.7 mW and occupies the smallest core area of only 0.12 mm2 to the best of our knowledge.

show abstract

A Low-Power SiGe BiCMOS 190-GHz Receiver With 47-dB Conversion Gain and 11-dB Noise Figure for Ultralarge-Bandwidth Applications

Cited by 23 publications

References 16 publications

Low Noise Amplifier using Darlington Pair At 90nm Technology

Low Noise Amplifier using Darlington Pair At 90nm Technology

Review of Millimeter-Wave Integrated Circuits With Low Power Consumption for High Speed Wireless Communications

Compact low‐power 154 GHz receiver front‐end in 0.13 µm SiGe BiCMOS

Contact Info

Product

Resources

About