A low temperature study of electron transport properties of tantalum nitride thin films prepared by ion beam assisted deposition

Lal, K.; Ghosh, Pritam; Biswas, Debasish; Meikap, Ajit Kumar; Chattopadhyay, S. K.; Chatterjee, Sudipta; Ghosh, Manas; Baba, Koumei; Hatada, Ruriko

doi:10.1016/j.ssc.2004.05.003

Cited by 6 publications

(8 citation statements)

References 45 publications

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“…studied the electrical transport properties in polycrystalline Ni films and suggested that the total resistivity could be written as the superposition of tunneling effect and scattering 23 . Hence, the temperature-dependent in our samples might also be given as: Here, the first term represents the resistivity dominated by FIT process and the residual terms are the contribution from temperature-dependent scattering 21 , 24 – 26 . The T 2 term includes the contribution from magnetic scattering, surface-induced scattering, and electron-electron scattering.…”

Section: Resultsmentioning

confidence: 99%

Size-dependent electrical transport properties in Co nanocluster-assembled granular films

Zhang

Wang

et al. 2017

Sci Rep

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A series of Co nanocluster-assembled films with cluster sizes ranging from 4.5 nm to 14.7 nm were prepared by the plasma-gas-condensation method. The size-dependent electrical transport properties were systematically investigated. Both of the longitudinal resistivity () and saturated anomalous Hall resistivity () continuously increased with the decrease of the cluster sizes (d). The firstly increased and then decreased with increasing the temperature for all samples, which could be well described by involving the thermally fluctuation-induced tunneling (FIT) process and scattering. The tunneling effect was verified to result in the invalidation of classical anomalous Hall effect (AHE) scaling relation. After deducting the contribution from tunneling effect to , the AHE scaling relation between and the scattering resistivity () by varying the temperature was reconstructed. The value of scaling exponent γ increased with increasing Co cluster sizes. The size dependence of γ might be qualitatively interpreted by the interface and surface-induced spin flip scattering. We also determined the scaling relation between and at 5 K by changing the Co cluster sizes, and a large value of γ = 3.6 was obtained which might be ascribed to the surface and interfacial scattering.

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Section: Resultsmentioning

confidence: 99%

Size-dependent electrical transport properties in Co nanocluster-assembled granular films

Zhang

Wang

et al. 2017

Sci Rep

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“…where W is the charging energy. In [18], it is shown that this function describes the resistivity of their Ta x N samples above 20 K. In figure 6, we show that this function does not fit our data. This suggests that, for our samples, columnar zones, if they exist, are not significantly important in the transport.…”

Section: Inhomogeneity Of Samplesmentioning

confidence: 56%

“…The extracted values of m are plotted in the inset to figure 8. Our data (closed circles) are compared with the results from [18]. Both sets of the data show that the data are mutually comparable and that m decreases with decreasing x.…”

Section: Electron-electron Scatteringmentioning

confidence: 86%

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Low-temperature transport properties of Ta_xN thin films (0.72 ⩽ x ⩽ 0.83)

Očko

Žonja

Nelson

et al. 2010

J. Phys. D: Appl. Phys.

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We report on low-temperature (4–320 K) transport properties of Ta x N thin films deposited on an amorphous SiO2 substrate. In this work, Ta x N thin films were restricted to a narrow range of x: 0.72 ⩽ x ⩽ 0.83 yet show considerable and nonmonotonic variation of their transport properties with Ta concentration. This behaviour is consistent with a local minimum in the density of electronic states at the Fermi level, as calculated for the rock salt intermetallic Ta4N5, and a rigid band model for describing the transport. The temperature dependence of the resistivity is best fit to the unusual form exp(−T/T 0). Interestingly enough, the fit parameter T 0 correlates well with the temperature of the maximum of the corresponding thermopower. Both of these characteristics, the fit and the correlation with the thermopower, are consistent with the Jonson–Mahan many-body formalism for charge and thermal transport when one has a nontrivial temperature dependence of the chemical potential. At the lowest temperatures measured, we have also found that the resistivity and thermopower show signatures of electron–electron interactions. We discuss also our results in the light of some theories usually used for describing transport of thin films and to other experimental investigations that have been performed on Ta x N.

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“…However, numerous experimental results show TaN x in the rocksalt structure has negative temperature coefficient of resistivity (TCR, here TCR is defined as dρ/(ρdT ), and ρ is the resistivity at a certain temperature T ) [5,12], and the origins of the negative TCR is still debatable. Tiwari et al ascribed the negative TCR of TaN films to weaklocalization effect [13], while the hopping conduction and electron-electron (e-e) interaction effect were considered as the origins by other groups [14,15]. Thus further investigations on the fundamental properties, especially * Corresponding author, e-mail: zhiqingli@tju.edu.cn with regard to the electrical transport properties, are still needed for the TaN x compounds.…”

Section: Introductionmentioning

confidence: 99%

Granular-composite-like electrical transport properties of polycrystalline cubic TaN x thin films prepared by rf sputtering method

Duan

Zhu

et al. 2018

Solid State Communications

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We have systematically investigated the electrical transport properties of polycrystalline TaNx (0.83 x 1.32) films with rocksalt structure from 300 down to 2 K. It is found that the conductivity varies linearly with ln T from ∼6 K to ∼30 K, which does not originate from the conventional two dimensional weak-localization or electron-electron interaction effects, but can be well explained by the intergrain Coulomb effect which was theoretically proposed in the granular metals. While the fluctuation-induced tunneling conduction process dominates the temperature behaviors of the conductivities (resistivities) above ∼60 K. Normal state to superconductive state transition is observed in the x 1.04 films in low temperature regime. The superconductivity can still be retained at a field of 9 T. The upper critical field increases linearly with decreasing temperature in the vicinity of the superconductive transition temperature, which is the typical feature of granular superconductors or dirty type-II superconductors. The granular-composite-like electrical transport properties of the polycrystalline TaNx films are related to their microstructure, in which the TaNx grains with high conductivity are separated by the poorly conductive amorphous transition layers (grain boundaries).

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A low temperature study of electron transport properties of tantalum nitride thin films prepared by ion beam assisted deposition

Cited by 6 publications

References 45 publications

Size-dependent electrical transport properties in Co nanocluster-assembled granular films

Size-dependent electrical transport properties in Co nanocluster-assembled granular films

Low-temperature transport properties of Ta_xN thin films (0.72 ⩽ x ⩽ 0.83)

Granular-composite-like electrical transport properties of polycrystalline cubic TaN x thin films prepared by rf sputtering method

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A low temperature study of electron transport properties of tantalum nitride thin films prepared by ion beam assisted deposition

Cited by 6 publications

References 45 publications

Size-dependent electrical transport properties in Co nanocluster-assembled granular films

Size-dependent electrical transport properties in Co nanocluster-assembled granular films

Low-temperature transport properties of TaxN thin films (0.72 ⩽ x ⩽ 0.83)

Granular-composite-like electrical transport properties of polycrystalline cubic TaN x thin films prepared by rf sputtering method

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Low-temperature transport properties of Ta_xN thin films (0.72 ⩽ x ⩽ 0.83)