A low-temperature temporary lamination and laser debonding technology to enable cost-effective fabrication of a through-glass-via (TGV) interposer on a panel substrate

Abstract

This paper describes a handling process for a thin glass panel, 200 mm x 200 mm x 130 µm, through double-side redistribution layer (RDL) formation to enable cost-effective fabrication of through-glass-via (TGV) interposers.The integration scheme includes lamination of a lowtemperature bonding material utilizing a lamination process temperature of less than 100°C to bond a thin (130-µm) glass panel onto a carrier glass panel 700 µm thick. The carrier glass panel is treated with a 150-nm laser release layer prior to lamination of the bonding film and subsequently the thin glass panel. Next, the RDL is formed, and the front side of the thin glass panel undergoes aluminum physical vapor deposition (PVD) and polymeric dielectric material deposition. Then a second carrier glass panel, treated with the laser release material and laminated with bonding film, is bonded on the front side of the thin glass panel. An excimer laser with an x-y scanning stage is rastered across the first carrier to ablate the laser release layer for separation of first carrier. Following laser separation, a solvent cleaning step is performed to remove bonding material from the backside of the thin glass panel. The process of applying metal PVD, lithography, and dielectric material is repeated on the backside of the thin glass panel. Finally, the thin glass panel is mounted to tape, and the second carrier glass panel is released using laser ablation to reveal the front side of the thin glass for solvent cleaning and final inspection.The integration of the dry bonding film, thin glass panel lamination, and selective laser debonding technology in this study will pave the way for realization of panel-level packaging in the near future. IntroductionMany papers and publications have thoroughly studied the capabilities of silicon interposers to achieve 2.5-D stacking integration while minimizing the mismatch in coefficient of thermal expansion (CTE) with silicon integrated circuits (ICs) [1]. Mature infrastructure, including equipment, process, and supply chain, suggests that silicon interposers are ideal for high-pin-count IC applications. However, cost-related issues such as size limitations of silicon substrates and the need for electrical insulation around via sidewalls for silicon semiconductor materials are considered to be important issues for future high-volume manufacturing (HVM) [2].

Temporary Bonding and Debonding in Advanced Packaging: Recent Progress and Applications

“…; as the application scenarios changed, materials and techniques for debonding using solvents (e.g., Zero Newton temporary debonding system from TOK [33,34]), mechanical forces (e.g., BrewerBOND ® 305) [35] or lasers (e.g., 3M WSS [36], HD-3007 from HDMS [23], BrewerBOND ® 701 [37][38][39]) to release were developed. Special technologies such as ZoneBOND ® [40] and air-jetting were developed [41,42]. In addition, hydrogenated amorphous silicon (a:Si-H) [22,43] and various polymers, such as polyelec-trolyte [44], iCVD polyglycidylmethacrylate (PGMA) [45] and polydimethylglutarimide (PMGI) [46], have also been used as temporary bonding materials.…”