A Low Turn-Off Loss 4H-SiC Trench IGBT With Schottky Contact in the Collector Side

Liu, Yanjuan; Wang, Ying; Fang, Junpeng; Shan, Chan; Cao, Fei

doi:10.1109/ted.2017.2755719

Cited by 15 publications

(3 citation statements)

References 36 publications

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“…[7,8] Another focused issue is improving the switching characteristic of SiC IGBT, and most approaches are devoted to extracting carriers. A common method is designing extractor in collector region to sweep out electrons, [9][10][11][12] but it also leads to low injection efficiency. In addition, the hole extractor is also feasible and it is more compatible with the top process.…”

Section: Introductionmentioning

confidence: 99%

A 4H-SiC trench IGBT with controllable hole-extracting path for low loss

Wu¹,

Liu²,

Song³

et al. 2023

Chinese Phys. B

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A novel 4H-SiC trench IGBT with a controllable hole-extracting (CHE) path is proposed and investigated in this paper. The CHE path is controlled by metal semiconductor gate (MES gate) and metal oxide semiconductor gate (MOS gate) in p-shield region. The grounded p-shield region can significantly suppress the high electric field around gate oxide in SiC devices, but it weakens the conductivity modulation in the SiC trench IGBT by rapidly sweeping out holes. This effect can be eliminated by introducing CHE path. The CHE path is pinched off by the high gate bias voltage in on-state to maintain high conductivity modulation and obtain a comparatively low on-state voltage (V ON). During the turn-off transient, the CHE path is formed, which contributes to a decreased turn-off loss (E OFF). Based on numerical simulation, the E OFF of the proposed IGBT is reduced by 89% compared with the conventional IGBT at same V ON and the V ON of the proposed IGBT is reduced by 50% compared to the grounded p-shield IGBT at same E OFF. In addition, the average power reduction for the proposed device can be 51.0 % to 81.7 % and 58.2% to 72.1% with its counterparts at a wide frequency range of 500 Hz to 10 kHz, revealing a great improvement of frequency characteristics.

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Section: Introductionmentioning

confidence: 99%

A 4H-SiC trench IGBT with controllable hole-extracting path for low loss

Wu¹,

Liu²,

Song³

et al. 2023

Chinese Phys. B

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“…In the case of high voltage modules (e.g., 4H-SiC IGBTs offering blocking voltage >10 kV [1]), the electric field around metallized tracks may become high enough to induce PD's in the gel, as well as in the substrate material itself. PD's in the gel rapidly induce irreversible degradation (cavities) [2].…”

Section: Introductionmentioning

confidence: 99%

Electrical and Optical PD Measurements with Si3N4 Power Electronics Substrate Embedded in Silicone Oil

Dorji,

Lesaint,

Hanna

et al. 2023

2023 IEEE Conference on Electrical Insulation and Dielectric Phenomena (CEIDP)

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HAL is a multi-disciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d'enseignement et de recherche français ou étrangers, des laboratoires publics ou privés.

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“…As a result, it has become a promising power semiconductor device. Many studies have attempted to produce a method of simulation/experiment design and fabricate a 4H–SiC IGBT device [ 2 , 3 , 4 , 5 ]; some researchers have focused on the ultra-low specific on-resistance [ 1 , 6 , 7 , 8 ], while others have aimed to solve the inherent tail current [ 9 , 10 , 11 ].…”

Section: Introductionmentioning

confidence: 99%

A Snapback-Free and Low Turn-Off Loss 15 kV 4H–SiC IGBT with Multifunctional P-Floating Layer

et al. 2022

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In this paper, a 4H–SiC IGBT with a multifunctional P-floating layer (MP-IGBT) is proposed and investigated by Silvaco TCAD simulations. Compared with the conventional 4H–SiC field stop IGBT (FS-IGBT), the MP-IGBT structure features a P-floating layer structure under the N-buffer layer. The P-floating layer increases the distributed path resistance below the buffer layer to eliminate the snapback phenomenon. In addition, the P-floating layer acts as an amplifying stage for the hole currents’ injection. The snapback-free structure features a half-cell pitch of 10 μm. For the same forward voltage drop, the turn-off loss of the MP-IGBT structure is reduced by 42%.

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A Low Turn-Off Loss 4H-SiC Trench IGBT With Schottky Contact in the Collector Side

Cited by 15 publications

References 36 publications

A 4H-SiC trench IGBT with controllable hole-extracting path for low loss

A 4H-SiC trench IGBT with controllable hole-extracting path for low loss

Electrical and Optical PD Measurements with Si3N4 Power Electronics Substrate Embedded in Silicone Oil

A Snapback-Free and Low Turn-Off Loss 15 kV 4H–SiC IGBT with Multifunctional P-Floating Layer

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