A magnetic tunnel junction with an L21-ordered Co2FeSi electrode formed by all room-temperature fabrication processes

Fujita, Y.; Yamada, Shinya; Maeda, Yoshiyuki; Miyao, Masanobu; Hamaya, Kohei

doi:10.1016/j.tsf.2013.08.130

Cited by 8 publications

(3 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Even for room-temperature (RT) growth, ideally D0 3 -and/or L2 1 -ordered structures were obtained for Fe 3 Si and Co 2 FeSi, respectively, on the (111) plane of Si substrates [11], [12]. Recently, using nonlocal spin-valve measurements and a 1-D spin diffusion model, we also demonstrated large P at RT for L2 1 -ordered Co 2 FeSi films [14], [15].…”

Section: Introductionmentioning

confidence: 91%

An All-Epitaxial Fe3Si/FeSi/Co2FeSi Trilayer Grown by Room-Temperature Molecular Beam Epitaxy

et al. 2014

Self Cite

View full text Add to dashboard Cite

We present a heat-treatment-free fabrication technique for pseudo current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) structures with a highly spin-polarized Co-based Heusler-compound electrode. Room-temperature molecular beam epitaxy enables an all-epitaxial Heusler compound/metallic spacer/Heusler compound, i.e., Fe 3 Si/FeSi/Co 2 FeSi, trilayer structure. Since each layer includes ideally ordered structures, the magnetization reversal process of the trilayer is changed from two-step switching to one-step switching upon cooling through the paramagnetic-ferromagnetic transition of the ordered FeSi spacer layer. This paper will open a way for high-performance CPP-GMR devices with Co-based Heusler compounds.Index Terms-Atomic arrangement matching, current-perpendicular-to-plane giant magnetoresistance (CPP-GMR), Heusler compounds, molecular beam epitaxy (MBE).

show abstract

Section: Introductionmentioning

confidence: 91%

An All-Epitaxial Fe3Si/FeSi/Co2FeSi Trilayer Grown by Room-Temperature Molecular Beam Epitaxy

et al. 2014

Self Cite

View full text Add to dashboard Cite

show abstract

“…[7][8][9] Hence, a detailed knowledge of the atomic structure and functional properties of the HMF layers grown on Si substrates is required. [10][11][12][13] The interface atomic and electronic structure is of particular importance for spin injection into semiconductors, in general. Preserving halfmetallicity at the interface is crucial for efficient spin injection.…”

mentioning

confidence: 99%

The role of chemical structure on the magnetic and electronic properties of Co2FeAl0.5Si0.5/Si(111) interface

Kuerbanjiang

Nedelkoski

Kepaptsoglou

et al. 2016

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

We show that Co2FeAl0.5Si0.5 film deposited on Si(111) has a single crystal structure and twin related epitaxial relationship with the substrate. Sub-nanometer electron energy loss spectroscopy shows that in a narrow interface region there is a mutual inter-diffusion dominated by Si and Co. Atomic resolution aberration-corrected scanning transmission electron microscopy reveals that the film has B2 ordering. The film lattice structure is unaltered even at the interface due to the substitutional nature of the intermixing. First-principles calculations performed using structural models based on the aberration corrected electron microscopy show that the increased Si incorporation in the film leads to a gradual decrease of the magnetic moment as well as significant spin-polarization reduction. These effects can have significant detrimental role on the spin injection from the Co2FeAl0.5Si0.5 film into the Si substrate, besides the structural integrity of this junction.

show abstract

“…~ 850 / 4.1 [137] ~ 58% (GGA) [66] 146 (GGA) [66] 1185 [4] ~ 1130 / 5.4919 [69] ~ 50% (MTJ) [64] 400 (LDA) [67] 5.7-6 μ B /f.u. [70] ~ 61% (MTJ) at RT [142] 780 (LAD + U) [66][141]…”

Section: Introductionmentioning

confidence: 99%

New Bandgap Measurement Technique for a Half-Metallic Ferromagnet

et al. 2014

View full text Add to dashboard Cite

Spintronics is a new and emerging field in nanotechnology, which has been evolving rapidly. It aims to exploit the spin degree of freedom in order to realise advanced electronic devices. With the recent improvement in the storage media devices following to the discovery of giant magnetoresistance effect, it is envisioned that the electronic devices have several advantages over the conventional electronics in respect to the storage capacity, speed and power consumption. One avenue towards next generation spintronic devices is to develop half-metallic ferromagnets (HMFs) with 100% spin polarisation (P) and Curie temperature (T C ) above room temperature (RT). HMFs have unique properties, in which the majority spins have a metallic band structure, whereas the minority spins have a semiconducting band with the Fermi level (E F ) lying within an energy gap. P of HMFs has been predominantly estimated using Julliere's formula in a magnetic tunnel junction (MTJ) or measured by the Andreev reflection (AR) at low temperature. Both methods are very sensitive to the surface/interface spin polarisation.Alternative optical methods such as photoemission have also been employed. However, these methods require a complicated and expensive set-up. Therefore, it is of paramount importance to directly and easily measure the band-gap of HMFs.The main aim of this study is to develop a new technique to directly measure the band-gap (E g ) of HMFs at RT. For that, a simple experimental set-up has been designed This technique allows measuring E g of HMFs at RT for the first time. It can therefore be used to provide simple optimisation of growth conditions.iii

show abstract

A magnetic tunnel junction with an L21-ordered Co2FeSi electrode formed by all room-temperature fabrication processes

Cited by 8 publications

References 28 publications

An All-Epitaxial Fe<sub>3</sub>Si/FeSi/Co<sub>2</sub>FeSi Trilayer Grown by Room-Temperature Molecular Beam Epitaxy

An All-Epitaxial Fe<sub>3</sub>Si/FeSi/Co<sub>2</sub>FeSi Trilayer Grown by Room-Temperature Molecular Beam Epitaxy

The role of chemical structure on the magnetic and electronic properties of Co2FeAl0.5Si0.5/Si(111) interface

New Bandgap Measurement Technique for a Half-Metallic Ferromagnet

Contact Info

Product

Resources

About