TRL is associated with resistance to radiotherapy among cervical cancer patients, and MDSC-targeting treatments may have therapeutic potential in these patients.

Granulocyte-colony stimulating factor (G-CSF) producing malignant tumor has been reported to occur in various organs, and has been associated with poor clinical outcome. The aim of this study is to investigate the significance of tumor G-CSF expression in the chemosensitivity of uterine cervical cancer. The clinical data of recurrent or advanced cervical cancer patients who were treated with platinum-based chemotherapy were analyzed. Clinical samples, cervical cancer cell lines, and a mouse model of cervical cancer were employed to examine the mechanisms responsible for the development of chemoresistance in G-CSF-producing cervical cancer, focusing on myeloid-derived suppressor cells (MDSC). As a result, the tumor G-CSF expression was significantly associated with increased MDSC frequencies and compromised survival. In vitro and in vivo experiments demonstrated that the increased MDSC induced by tumor-derived G-CSF is involved in the development of chemoresistance. The depletion of MDSC via splenectomy or the administration of anti-Gr-1 antibody sensitized G-CSF-producing cervical cancer to cisplatin. In conclusion, tumor G-CSF expression is an indicator of an extremely poor prognosis in cervical cancer patients that are treated with chemotherapy. Combining MDSC-targeting treatments with current standard chemotherapies might have therapeutic efficacy as a treatment for G-CSF-producing cervical cancer.

This paper reviews the recent progress in germanium (Ge) spintronics on the basis of the electrical spin injection from ferromagnets (FM), where Ge is a next generation semiconductor for applications such as CMOS and optical communication on the silicon platform. In general, four-terminal nonlocal voltage measurements in FM–Ge lateral spin-valve devices are important to discuss the spin transport and spin relaxation in n-Ge. First, to obtain relatively low contact resistance compared to the FM/MgO/Ge contacts, we introduce the formation of high-quality FM/Ge heterointerfaces with a phosphorus δ-doped Ge layer, where the atomic arrangement matching at the interface between the (1 1 1) surface of body-centered cubic FMs and Ge(1 1 1) is important. Next, we explain electrical detections of the spin transport in degenerate n-Ge. Owing to the Heusler alloy/Ge Schottky-tunnel barrier contacts, we obtain relatively large spin signals compared to those detected by using conventional CoFe contacts. Furthermore, we can experimentally determine the spin diffusion length and the spin lifetime in degenerate n-Ge by quantitatively analyzing the contact-distance dependence of the spin signals and the Hanle-effect curves. Since we can clarify the temperature dependence of the spin lifetime from 8 to 296 K, the spin relaxation mechanism in n-Ge can be understood as a consequence of the intervalley spin-flip scattering in the conduction band. We propose an advantage over GaAs systems by comparing the spin lifetimes between Ge and GaAs at around room temperature. Finally, we describe future prospects of Ge spintronics, including vertically fabricated device structures such as vertical spin MOSFETs and spin LEDs.

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