2011
DOI: 10.1149/1.3591081
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A Manufacturing Grade, Porous Oxycarbosilane Spin-On Dielectric Candidate with K ≤ 2.0

Abstract: Ultra low-k porous (k = 2.4) materials are currently used for microelectronic applications. Future device generations require even lower dielectric constants, i.e. higher porosity. For highly porous systems, processing damage and mechanical properties are of great concern. Regarding the latter, sol-gel derived, spin-on oxycarbosilane homopolymers exhibit significantly higher stiffness and fracture resistance as compared to traditional organosilicates. Unfortunately, traditional sol-gel formulations show poor l… Show more

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Cited by 25 publications
(23 citation statements)
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“…Three types of pore surfaces with different surface chemistry were employed in this study (Figure ), namely hydroxylated, untreated, and silylated pore surfaces (listed in the order of increasing hydrophobicity). The starting material was the untreated matrix, an ethylene‐bridged organosilicate (Et‐OCS) thin film with a porosity of 42.0% and a thickness of ≈600 nm . The percolating pore network in the untreated matrix consisted of approximately cylindrical pores of which the average pore diameter was 7.8 nm (Figure S5, Supporting Information).…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Three types of pore surfaces with different surface chemistry were employed in this study (Figure ), namely hydroxylated, untreated, and silylated pore surfaces (listed in the order of increasing hydrophobicity). The starting material was the untreated matrix, an ethylene‐bridged organosilicate (Et‐OCS) thin film with a porosity of 42.0% and a thickness of ≈600 nm . The percolating pore network in the untreated matrix consisted of approximately cylindrical pores of which the average pore diameter was 7.8 nm (Figure S5, Supporting Information).…”
Section: Resultsmentioning
confidence: 99%
“…Surface Functionalization of the Nanoporous Matrix : The Et‐OCS matrix was obtained by spin‐casting and thermally curing a porogen‐containing sol−gel formulation on top of a 200 mm silicon wafer coated with a dense Et‐OCS adhesion layer 8a,10. The silicon wafer substrate was then diced into 50 × 50 mm square coupons.…”
Section: Methodsmentioning
confidence: 99%
“…Film preparation A k ¼ 2.0 spin-on resin derived from an ethylene-bridged organosilicate precursor was selected for this study. 4 porogen in the sol-gel formulation was required. The porogen nature and quantity, along with the sol-gel conditions were optimized to generate k ¼ 2.0 films.…”
Section: Methodsmentioning
confidence: 99%
“…This issue was however addressed by increasing the hybrid silica network connectivity through the use of carbon bridged precursors, leading to improved low-k stiffness, fracture resistance, and interfacial adhesion. [2][3][4][5][6][7][8][9] Second, highly porous low-k materials are a lot more prone to plasma damage due to a huge increase in accessible surface area. [10][11][12][13] Over the past 15 years, a lot of efforts have been devised to either prevent or mitigate plasma damage.…”
Section: Introductionmentioning
confidence: 99%
“…[33] Dubois et al have proposed first oxycarbosilane material and then hybrid oxycarbosilane / methylsislsequioxane material as a porous low-k dielectric. [34,35,36] They have shown that the carbon bridges improve the mechanical stability of the material. [35] With their new material, the carbon content increases, and the pore size and porosity decrease.…”
Section: Plasma-resistant Porous Sicohmentioning
confidence: 99%