ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings.
DOI: 10.1109/ispsd.2003.1225293
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A material innovation for the electronic industry: float zone single crystal silicon with 200mm diameter

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Cited by 6 publications
(7 citation statements)
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“…The most visually striking features in the flats are concentric circles, commonly known as "tree rings" (see Figure 1). They originate from circularly symmetric variations in impurity concentrations that arise during the growth of single-crystal silicon from polysilicon (see Figure 5 in Altmannshofer et al (2003)). 6 If the density of doping impurities is not uniform in the direction parallel to the back-side of the CCD (the x direction), a difference in space charges will generate a transverse field E ⊥ , perpendicular to the optical axis of the detector (the y direction).…”
Section: The Dark Energy Survey and The Dark Energy Cameramentioning
confidence: 99%
“…The most visually striking features in the flats are concentric circles, commonly known as "tree rings" (see Figure 1). They originate from circularly symmetric variations in impurity concentrations that arise during the growth of single-crystal silicon from polysilicon (see Figure 5 in Altmannshofer et al (2003)). 6 If the density of doping impurities is not uniform in the direction parallel to the back-side of the CCD (the x direction), a difference in space charges will generate a transverse field E ⊥ , perpendicular to the optical axis of the detector (the y direction).…”
Section: The Dark Energy Survey and The Dark Energy Cameramentioning
confidence: 99%
“…They consist of concentric variations of the flat-field response to a uniform illumination. The center of the circles coincides with the center of the ingot from which the sensor was manufactured, as discussed in [5]. On DECam, these variations amount to about 0.2% (y band) to 0.4% (g band) peak to peak [6], and the patterns look alike in different bands.…”
Section: Tree Ringsmentioning
confidence: 78%
“…The physical picture one can draw is the following: during the growth of the silicon boule, there are time-dependent variations of silicon purity, which translate into small static distortions of the drift field in the sensor [5,6]. Those distortions in turn displace the image in a positiondependent way and the divergence of the displacement field is observed as pixel size variations imprinted on flat-field images.…”
Section: Tree Ringsmentioning
confidence: 99%
“…ACRT becomes even important for crucible-free floating zone (FZ) growth of oxygenfree large-diameter (200 mm) silicon crystals [50,51]. To overcome the difficulty of growth front break out in the radial direction, especially at large diameters, the growing crystal is periodically rotated through a sequence of rotation angles.…”
Section: Acrt In Group-iv Growthmentioning
confidence: 99%