A mathematical space mapping model for ballistic carbon nanotube field-effect transistors

Abstract

In this study, a mathematical model is presented based on mathematical space mapping for ballistic carbon nanotube field-effect transistors. This model is generalized from another model that was based on the concept of neural space mapping to calculate the three parameters of a coarse model. These parameters were the threshold voltage, the Early voltage, and assumed constant k of a modified ''level 1'' MOSFET model in simulation program with integrated circuit emphasis (SPICE). In this work, three analytical relations are introduced to replace the neural networks of the main model. The comparisons between the proposed model and a well-known reference model, named FETToy, show that the proposed model had reasonable accuracy in terms of different biases and physical parameters.