A medium energy ion scattering analysis of the SiSiO2 interface formed by ion beam oxidation of silicon

Kim, Young‐Pil; Choi, Si Kying; Ha, Yong Ho; Kim, Sehun; Kim, Hyun Kyong; Moon, Dae Won

doi:10.1016/s0169-4332(97)80080-3

Applied Surface Science

1997

DOI: 10.1016/s0169-4332(97)80080-3

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A medium energy ion scattering analysis of the SiSiO2 interface formed by ion beam oxidation of silicon

Young‐Pil Kim

Si Kying Choi

Yong Ho Ha

et al.

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Cited by 5 publications

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A medium energy ion scattering analysis of the SiSiO2 interface formed by ion beam oxidation of silicon

Cited by 5 publications

References 18 publications

Depth profiles and concentration percentages of SiO2 and SiO x induced by ion bombardment of a silicon (100) target

Depth profiles and concentration percentages of SiO2 and SiO x induced by ion bombardment of a silicon (100) target

Application of r.f. plasma ultrashallow nitrogen ion implantation for pedestal oxynitride layer formation

The dose dependence of Si sputtering with low energy ions in shallow depth profiling

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