A MEMS-based quartz resonator technology forGHhz applications

Stratton, F. P.; Chang, David T.; Kirby, D. J.; Joyce, R. J.; Hsu, Tsung-Yuan; Kubena, R. L.; Yong, Yook‐Kong

doi:10.1109/freq.2004.1418425

Cited by 30 publications

(19 citation statements)

References 6 publications

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“…Many of these results have been reported previously [4]. Our newest results indicate that resonators with fundamental mode resonant frequencies approaching 3 GHz can be fabricated with these basic techniques.…”

Section: Resonator Resultssupporting

confidence: 63%

“…As reported previously, the temperature dependence of our first generation resonators was affected by bonding stresses at the Si substrate interface [4]. Using a 300°C Au-to-Au thermal compression bond, residual stress levels of several MPa were possible in the active areas of our designs.…”

Section: A Temperature Dependencementioning

confidence: 63%

“…Monolithic crystal filters have been fabricated using the design methodology described previously [4]. Two and three pole filters were designed for the frequency range between 200−300 MHz.…”

Section: Filter Resultsmentioning

confidence: 99%

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MEMS-Based Quartz Oscillators and Filters for On-Chip Integration

Kubena¹,

Stratton²,

Chang³

et al. 2005

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Abstract We report on the development of a new microelectronic mechanical system (MEMS)-based quartz resonator technology that allows for the processing and integration of VHF to UHF high-Q oscillators and filters with high-speed silicon or III-V electronics. This paper describes the first demonstration of prototype oscillators and filters using this newly developed technology. We present impedance, Q, and temperature sensitivity data of UHF resonators along with phase noise and Allan deviation measurements. Our first 2-pole filter data showing low insertion loss are also presented. Finally, the results of power handling measurements are described for applications where high levels of background signals are present.

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Section: Resonator Resultssupporting

confidence: 63%

Section: A Temperature Dependencementioning

confidence: 63%

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MEMS-Based Quartz Oscillators and Filters for On-Chip Integration

Kubena¹,

Stratton²,

Chang³

et al. 2005

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“…The asymmetric thickness shear mode is common in quartz resonators, excited by the application of an AC signal across electrodes on opposing faces of a quartz crystal [13]. Unlike the quartz thickness shear mode, the electrode configuration of the dielectrically transduced silicon bar induces a symmetric mode, as shown in Figure 2 The lateral displacement u x for a one-dimensional thickness shear mode is given by…”

Section: Quarter-wave Thickness Shear Bar Resonatormentioning

confidence: 99%

“…Minimizing Equation 3.7 with respect to resonant frequency for a 200 nm dielectric film, one obtains an optimal frequency of operation at 15.8 GHz. Assuming an f Q product is 5×10 13 and a bias voltage of 20 V, this structure has 5 kΩ µm 2 impedance at 3rd harmonic resonance. For instance, a 50 Ω BST resonator at 15 GHz can be obtained by stacking the bulk/dielectric layers vertically (thickness extensional mode) with a 10 µm× 10 µm footprint, or by forming a 1 µm thick extensional ring [30] with an approximate radius of 16 µm.…”

Section: Analysis: Capacitive Drive and Sensementioning

confidence: 99%

The Resonant Body Transistor

2010

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Cornell University 2009With quality factors (Q) often exceeding 10,000, vibrating micromechanical resonators have emerged as leading candidates for on-chip versions of high-Q resonators used in wireless communications systems, sensor networks, and clocking sources in microprocessors. However, extending the frequency of MEMS resonators generally entails scaling of resonator dimensions leading to increased motional impedance. In this dissertation, I introduce a new transduction mechanism using dielectric materials to improve performance and increase frequency of silicon-based RF acoustic resonators.Traditionally, electrostatically transduced mechanical resonators have used air-gap capacitors for driving and sensing vibrations in the structure. To increase transduction efficiency, facilitate fabrication, and enable GHz frequencies of operation, it is desirable to replace air-gap transducers with dielectric films.In my doctoral work, I designed, fabricated, and demonstrated dielectrically transduced silicon bulk-mode resonators up to 6.2 GHz, marking the highest acoustic frequency measured in silicon to date. The concept of internal dielectric transduction is introduced, in which dielectric transducers are incorporated directly into the resonator body. With dielectric films positioned at points of maximum strain in the resonator, this transduction improves in efficiency with increasing frequency, enabling resonator scaling to previously unattainable frequencies. Using internal dielectric transduction, longitudinal-mode resonators exhibited the highest frequency-quality factor ( f Q) product in silicon to date

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