2021
DOI: 10.3390/mi12080892
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A MEMS Fabrication Process with Thermal-Oxide Releasing Barriers and Polysilicon Sacrificial Layers for AlN Lamb-Wave Resonators to Achieve fs·Qm > 3.42 × 1012

Abstract: This paper presents a micro-electro-mechanical systems (MEMS) processing technology for Aluminum Nitride (AlN) Lamb-wave resonators (LWRs). Two LWRs with different frequencies of 402.1 MHz and 2.097 GHz by varying the top interdigitated (IDT) periods were designed and fabricated. To avoid the shortcomings of the uncontrollable etching of inactive areas during the releasing process and to improve the fabrication yield, a thermal oxide layer was employed below the platted polysilicon sacrificial layer, which cou… Show more

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Cited by 5 publications
(2 citation statements)
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References 28 publications
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“…The fabrication process starts with cavity etching, thermal oxidation, polysilicon deposition, etching and polishing, which forms a release barrier that can prevent the excessive etching during XeF 2 releasing. The detailed process flow is similar to that described in [ 26 ]. The fabricated 6-inch wafer is shown in Figure 5 a, and the scanning electron microscope (SEM) image of a fabricated LWR is shown in Figure 5 b.…”
Section: Design and Micro-fabricationmentioning
confidence: 99%
“…The fabrication process starts with cavity etching, thermal oxidation, polysilicon deposition, etching and polishing, which forms a release barrier that can prevent the excessive etching during XeF 2 releasing. The detailed process flow is similar to that described in [ 26 ]. The fabricated 6-inch wafer is shown in Figure 5 a, and the scanning electron microscope (SEM) image of a fabricated LWR is shown in Figure 5 b.…”
Section: Design and Micro-fabricationmentioning
confidence: 99%
“…Piezoelectric transduction mechanisms have been exploited for lowering a resonator's motional resistance [12][13][14][15][16][17]. By taking full advantage of the strong piezoelectric coefficient of sputtered c-axis-aligned ZnO thin films, this work investigates ZnO-on-nickel lateral-extensional mode resonators that are capable of realizing high electromechanical coupling (kt 2 ) and low motional impedances.…”
Section: Introductionmentioning
confidence: 99%