6407wileyonlinelibrary.com strong dependence of the crystallization speed on temperature has recently been linked to the high fragility of PCMs. [4][5][6][7][8][9][10] More specifi cally, this behavior has been attributed to a pronounced change in the activation energy and the prefactor for growth velocity as a function of temperature, which is a fi ngerprint of fragility.The GeSbTe compounds lying on the pseudobinary line GeTe-Sb 2 Te 3 are the most widely studied family of PCMs, due to their applications in DVD-RAM, rewritable Blu-Ray discs, and phase-change memories. [11][12][13][14][15][16][17][18][19][20][21] Recrystallization of GST is known to be triggered by nucleation events. However, in state-of-the-art memory cells, it may be governed by crystal growth at the interface with the crystalline matrix, due to the small size of the amorphous mark. For system sizes of the order of nanometers, crystallization occurs on the sub-nanosecond time scale at elevated temperatures, opening up the possibility of investigating this phenomenon by ab initio molecular dynamics (AIMD) based on density functional theory (DFT). [22][23][24][25][26] In previous studies [22][23][24] amorphous models of the prototypical compound Ge 2 Sb 2 Te 5 (GST) containing 60-180 atoms were crystallized using AIMD. These works provided valuable information about the microscopic mechanisms of crystallization, although they did not assess fi nite size effects, which are expected to play an important role in such small samples. Larger models of GST containing 460 and 640 atoms were later studied: [ 25,26 ] in one study, [ 25 ] crystallization was facilitated by inserting a crystalline seed inside the amorphous network, whereas, in another [ 26 ] extremely long simulations (4 ns) of 460-atoms models without structural constraints were carried out.The stable crystalline phase of GST is hexagonal and consists of alternating Ge, Sb, and Te layers. [ 27 ] However, there is experimental evidence that, upon fast crystallization of the glass or the supercooled liquid, a metastable rocksalt phase is formed. In this phase, Te atoms occupy one face-centered cubic sublattice, whereas Ge, Sb, and vacancies are randomly arranged in the second one. The amount of disorder in this sublattice is difficult to ascertain. Recently, it has been shown experimentally, [ 28 ] and subsequently corroborated by theory, [ 29 ] that the degree of randomness in crystalline GeSbTe and similar compounds (such as Ge 1 Sb 2 Te 4 ) can be reduced by thermal annealing, so as to induce disorder-driven insulator-metal transitions.In this work, we carry out AIMD simulations to study the crystallization kinetics of GST at high temperature (≈600 K) and estimate its growth velocity, as well as to determine the structural properties of the recrystallized phase, including the layer stacking Ge 2 Sb 2 Te 5 (GST) is an important phase-change material used in optical and electronic memory devices. In this work, crystal growth of GST at 600 K is investigated by ab initio molecular dynamics. S...