A metamorphic heterostructure field-effect transistor with a double delta-doped channel

Huang, Dong-Hai; Hsu, Wei‐Chou; Lin, Yu-Hsiang; Yeh, Jung-Han; Huang, Jen-Fa

doi:10.1088/0268-1242/22/7/018

Cited by 4 publications

(4 citation statements)

References 14 publications

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“…Also, for the improvement of gate turn-on voltage, the npn depletion in the camel-like gate provides higher potential barrier height than the conventional M-S gate structure [6][7][8]. On the other hand, delta-doped field-effect transistors have been demonstrated to substantially improve the linearity of transfer characteristics due to the high two-dimensional electron gas, good carrier confinement, and ease control of threshold voltage [9][10][11]. However, the low gate potential barrier height still limits the maximum drain output current.…”

Section: Introductionmentioning

confidence: 99%

Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor

Tsai

Lour

Huang

et al. 2010

Solid-State Electronics

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Section: Introductionmentioning

confidence: 99%

Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor

Tsai

Lour

Huang

et al. 2010

Solid-State Electronics

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“…Recently, the delta-doping has been used as a backbone technique to improve important characteristics, such as the linearity, in field effect transistor devices for application in millimeter-wave integrated circuits (MMIC) and wireless components [1][2][3][4][5][6][7]. The better performance of the mentioned devices relies on an improvement in the transport properties via optimization of the coupling between the delta layers and the heterostructure region.…”

Section: Introductionmentioning

confidence: 99%

Electron Subband Structure and Mobility Trends in P-N Delta-Doped Quantum Wells in Si

Ariza-Flores

Rodrı́guez-Vargas²

2008

PIER Letters

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Abstract-We present the electronic spectrum of a n-type deltadoped quantum well in Si coupled to a p-type delta-doped barrier within the envelope function effective mass approximation. We applied the Thomas-Fermi approximation to derive an analytical expression for the confining potential, and thus, we obtain the electronic structure in a simple manner. We analyzed the electron subband structure varying the distance between the doping planes (l) as well as the impurity density in them (n 2D , p 2D ). We also study the mobility trends through an empirical formula that is based on the electron levels, the electron wave functions and the Fermi level. We find a monotonic decrease in the mobility as the p-type barrier moves away from the n-type well, and optimum parameters, l = 70Å and n 2D = 5 × 10 12 cm −2 and p 2D = 5 × 10 13 cm −2 , for maximum mobility.

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“…16 A number of works have established that ␦-doped FETs have advantageous properties, such as a higher breakdown voltage, greater current-carrying capabilities, and a higher transconductance than conventional HEMTs. [17][18][19][20][21][22] Furthermore, the industrial need for a high-temperature electronic technology has grown. 23,24 Consequently, various efforts have been made to develop high-temperature operated devices.…”

mentioning

confidence: 99%

Performance of Surface and Gate-Engineered AlGaAs∕InGaAs Pseudomorphic High-Electron Mobility Transistors

Lin

Liang

Lin

2009

J. Electrochem. Soc.

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The epilayers in pseudomorphic high-electron mobility transistor ͑pHEMT͒ structures are grown by metallorganic chemical vapor deposition on GaAs substrates. A treatment with ammonium polysulfide ͑NH 4 ͒ 2 S X to passivate the surface of AlGaAs barrier layer is performed. Then, the surface morphology of the sulfur-treated AlGaAs layers was investigated by atomic force microscopy. The chemical compositions of AlGaAs surfaces before and after S treatment are studied using X-ray photoelectron spectroscopy. Two metals ͑Au and Pt/Au͒ are used as Schottky contacts on the gate. The passivated Pt/Au gate pHEMT outperforms the other three pHEMTs investigated in this work in both dc and high-frequency characteristics. The Schottky barrier height varies from 0.734 eV for Au on the unpassivated device to 0.904 eV for Pt/Au on the passivated device. Sulfur treatment and Pt/Au metallization yield the highest turn-on voltage and reverse breakdown voltage. An outstanding feature of this Pt/Au gate high-electron mobility transistor with passivation is its high f max . Furthermore, at 300 K, the passivated Pt/Au gate pHEMT has an exceptionally high f max /f T -ratio of 3.95. Following full characterization of these transistors at dc and radio frequencies, these devices undergo high-temperature tests. Experimental data reveal remarkably favorable characteristics of the sulfur-treated pHEMT with a Pt/Au gate. Surface and gate engineering are applied to pseudomorphic AlGaAs/InGaAs/GaAs heterostructures in the device, to achieve an unprecedented combination of high dc and high-frequency characteristics.Both commercial and military interests in high-power, highfrequency microwave transistors have fueled recent research into GaAs-based high electron mobility transistors ͑HEMTs͒. 1 The vast majority of reported HEMTs exploit AlGaAs/GaAs heterojunctions in which electrons are transferred from the heavily doped AlGaAs to the narrow bandgap GaAs. [2][3][4] No donor atoms is intentionally present in the undoped GaAs layer; thus, electrons in the twodimensional electron gas ͑2DEG͒ channel do not undergo impurity scattering; they consequently have high mobility. Initial ideas concerning the accumulation of charge at a heterojunction interface and its potential usefulness for devices was addressed in the late 1960s. Furthermore, the development of metallorganic chemical vapor deposition ͑MOCVD͒ 5 and molecular beam epitaxy ͑MBE͒ 6 technologies have made the production of heterostructures, quantum wells, and superlattices. MOCVD epitaxial growth technology was described in the scientific literature in 1968 by Manasevit, 7 even though related experimental results had been previously proposed in the patent literature by other workers, 8 prior to 1967. MOCVD technology for the growth of III-V compound semiconductors developed rapidly to dominate the production of epitaxial materials for both research and production. In 1980, researchers 9 at Fujitsu first proposed an experimental AlGaAs/GaAs HEMT and suggested the term HEMT. The selective doping of ...

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A metamorphic heterostructure field-effect transistor with a double delta-doped channel

Cited by 4 publications

References 14 publications

Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor

Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor

Electron Subband Structure and Mobility Trends in P-N Delta-Doped Quantum Wells in Si

Performance of Surface and Gate-Engineered AlGaAs∕InGaAs Pseudomorphic High-Electron Mobility Transistors

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