Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor

Tsai, Jung‐Hui; Lour, Wen‐Shiung; Huang, Chia-Hong; Dale, Ning-Feng; Lee, Yuan-Hong; Sheng, Jhih-Syuan; Liu, Wen‐Chau

doi:10.1016/j.sse.2009.10.004

Cited by 2 publications

(1 citation statement)

References 14 publications

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“…Much research effort has been devoted to stimulating various compound semiconductor-based high-electronmobility transistors (HEMTs) [1][2][3][4][5][6][7] for millimeter-wave integrated circuit (MMIC) applications because of their high carrier transport and high concentration of two-dimensional electron gas (2DEG) in the narrow-gap conduction channel. However, it is known that the gate leakages are crucial to the device performance [8], including breakdown voltage, voltage gain, RF characteristics, noise figure, power amplification and high temperature reliability.…”

Section: Introductionmentioning

confidence: 99%

Comparative studies of MOS-gate/oxide-passivated AlGaAs/InGaAs pHEMTs by using ozone water oxidation technique

Lee¹,

Hung²,

Chou³

et al. 2012

Semicond. Sci. Technol.

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Al 0.22 Ga 0.78 As/In 0.24 Ga 0.76 As pseudomorphic high-electron-mobility transistors (pHEMTs) with metal-oxide-semiconductor (MOS)-gate structure or oxide passivation by using ozone water oxidation treatment have been comprehensively investigated. Annihilated surface states, enhanced gate insulating property and improved device gain have been achieved by the devised MOS-gate structure and oxide passivation. The present MOS-gated or oxide-passivated pHEMTs have demonstrated superior device performances, including superior breakdown, device gain, noise figure, high-frequency characteristics and power performance. Temperature-dependent device characteristics of the present designs at 300-450 K are also studied.

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