Comparative studies of MOS-gate/oxide-passivated AlGaAs/InGaAs pHEMTs by using ozone water oxidation technique

Abstract

Al 0.22 Ga 0.78 As/In 0.24 Ga 0.76 As pseudomorphic high-electron-mobility transistors (pHEMTs) with metal-oxide-semiconductor (MOS)-gate structure or oxide passivation by using ozone water oxidation treatment have been comprehensively investigated. Annihilated surface states, enhanced gate insulating property and improved device gain have been achieved by the devised MOS-gate structure and oxide passivation. The present MOS-gated or oxide-passivated pHEMTs have demonstrated superior device performances, including superior breakdown, device gain, noise figure, high-frequency characteristics and power performance. Temperature-dependent device characteristics of the present designs at 300-450 K are also studied.

Al0.25Ga0.75N/GaN enhancement-mode MOS high-electron-mobility transistors with Al2O3 dielectric obtained by ozone water oxidization method

“…14,15) Different processing techniques for forming oxide films include atomic layer deposition (ALD), 16) molecular beam epitaxy (MBE), 17) metal-organic chemical vapor deposition (MOCVD), 18) and RF sputtering. 19) A cost-effective ozone water oxidization method has been used for MOS-HEMT fabrication, [20][21][22] since it has advantages of low cost processing facility, processing simplicity, compatibility to device fabrication, and room-temperature operation under atmospheric pressure. In this work, E-mode operation is achieved for conventional Schottky-gate HEMTs by growing a 5-nm-thick Al 0.25 Ga 0.75 N barrier layer on GaN.…”

Comparative Study on Graded-Barrier AlxGa1−xN/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistor by Using Ultrasonic Spray Pyrolysis Deposition Technique

“…The interfacial quality within the barrier/channel heterostructure is important to channel conductivity and current densities. Metal-oxide-semiconductor HFETs (MOS-HFETs) using various gate oxides have been studied [1][2][3]. The oxide deposition systems includes e-beam evaporation [4], RF sputtering [5], plasma-enhanced chemical vapor deposition (PECVD) [6], metal-organic chemical vapor deposition (MOCVD) [7], and atomic layer deposition (ALD) [8,9].…”

Decreasing Defect‐State Density of Al2O3/GaxIn1−xAs Device Interfaces with InOx Structures

“…An oxide/Ga x In 1− x As interface is frequently found as part of various device components (e.g., metal–oxide–semiconductor (MOS) high electron mobility transistor, structure, and IR detectors) currently used in electronics and in the design of many a potential future device (e.g., III–V MOS field‐effect transistor, and tunnel field‐effect transistor) . However, oxide/Ga x In 1− x As interfaces are usually considered as nonoptimized, adversely affecting the device performance: namely, they contain a high density of material defects that cause electronic defect states in the band‐gap area (gap states), which further increase the leakage current, nonradiative recombination, and Fermi‐level pinning, for example.…”