Articles you may be interested inOn the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors J. Appl. Phys. 116, 134506 (2014); 10.1063/1.4896900Performance comparison of front-and back-illuminated AlGaN-based metal-semiconductor-metal solar-blind ultraviolet photodetectors

Novel Al 0.75 Ga 0.25 N/Al x Ga 1−x N/Al 0.75 Ga 0.25 N/AlN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with symmetrically-graded widegap Al x Ga 1−x N channel (x = 0.75 → 0.25 → 0.75) grown on a SiC substrate are investigated. Al 2 O 3 was devised as the gate dielectric by using a non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique. Device characteristics with respect to different etch depths of the source/drain recesses were studied. For a 2μm gate length (L G), the present widegap V-shape-channel MOS-HFET has shown improved maximum drain-source current density (I DS,max) of 299.3 A/mm at V DS = 20 V, I DS density at V GS = 0 V (I DSS0) of 153.9 mA/mm, on/off-current ratio (I on /I off) of 1.4 × 10 7 , extrinsic transconductance (g m,max) of 16.7 mS/mm, two-terminal off-state gate-drain breakdown voltage (BV GD) of −379 V, and three-terminal on-state drain-source breakdown voltage (BV DS) of 339 V. Besides, superior deep-UV sensing performance with high spectral responsivity (SR) of 1780 (810.2) A/W at wavelength λ = 250 (300) nm are also achieved. INDEX TERMS Al x Ga 1−x N, MOS-HFET, symmetrically-graded, widegap channel, Al 2 O 3 , non-vacuum ultrasonic spray pyrolysis deposition, spectral responsivity, deep-UV.

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