Photocurrent characteristics of two-dimensional-electron-gas-based AlGaN/GaN metal-semiconductor-metal photodetectors

Huang, Yi-Ping; Chen, D. J.; Lu, Huimin; Shi, Huifang; Han, Ping; Zhang, R.; Zheng, Youdou

doi:10.1063/1.3453871

Cited by 47 publications

(24 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…At the time, we get the absorbance spectrum line's match value. The optical distance and detection range of the sensor can be adjusted in this application program; for example, when the sensor's optical distance is 1 cm, the detection range of nitrobenzene is 0.05-50 ppm, the detection range for dichlorophen is 0.1-100 ppm, and the detection range for chlorobenzene is 30-3,000 ppm (Chen et al, 2009;Huang et al, 2010;Nanjing University, 2012).…”

Section: Ultraviolet Sensormentioning

confidence: 99%

Multisensor Early Warning System Applied to Environmental Management

XiaBisheng

QianXin

WangYulei

et al. 2015

Environmental Engineering Science

View full text Add to dashboard Cite

Sudden water pollution accidents threaten the safety of people's drinking water, such as accidental or deliberate contamination events. In this contribution, we introduce a real-time early warning system that can monitor water to ensure safety. We report results of a pilot-scale installation of a sensor-based early warning system (EWS) to detect and report water quality problems along the Yangtze River near Nanjing, China. The system used four different sensors. Water quality parameters detected in this study were necessary to calculate water quality indices consistent with the Chinese government standards. Sensors transmitted data to a server, which stored them in a database, integrated the data into different water quality indices, and sent them to the client. An alarm was triggered if the indices exceeded a certain threshold. The originality of this article was that we set the indices' thresholds and the combined threshold of them to judge the sudden water pollution accidents clearly and accurately and then we gave the alarm levels according to thresholds. The client can support the EWS by storing the data, facilitating inquiries about historic data, and presenting oscillograms and trends within the database.

show abstract

Section: Ultraviolet Sensormentioning

confidence: 99%

Multisensor Early Warning System Applied to Environmental Management

XiaBisheng

QianXin

WangYulei

et al. 2015

Environmental Engineering Science

View full text Add to dashboard Cite

show abstract

“…Such requirement includes the preparation of an AlGaN/GaN heterojunction to obtain a 2D electron gas in a device with high electron mobility transistors. [5][6][7][8] Conversely, graphene, a typical 2D material with broad applications, has attracted wide attention in recent years [9] due to its excellent properties, such as atomic thickness and highelectron mobility. Previous studies have demonstrated that graphene can form heterojunctions with GaN, [10] Ga 2 O 3 , [11,12] and SiC.…”

Section: Introductionmentioning

confidence: 99%

High‐Responsivity Graphene/4H‐SiC Ultraviolet Photodetector Based on a Planar Junction Formed by the Dual Modulation of Electric and Light Fields

Chen

et al. 2020

Advanced Optical Materials

View full text Add to dashboard Cite

Ultraviolet (UV) photodetectors have been fabricated on a graphene/4H-SiC wafer. In this device, the electrical doping in the graphene layer, under the gate, is realized by changing the gate voltage while the optical doping in the graphene layer outside the gate region is realized through the photogenerated carrier injection from SiC, by laser excitation at 325 nm. This kind of dual modulation of optical and electric fields ultimately results in the formation of a planar n-p-n or n-n-n junction in the graphene layer. The photoresponse results demonstrate that the planar n-p-n junction is formed at the negative gate voltage, and facilitates negative photoconductivity. The n-n-n junction is formed at the positive gate voltage and facilitates normal photoconductivity. The maximum responsivity, which is attributable to the high photoconductive gain in the planar n-n-n junction, is 254.1A W −1 , at drain-source voltage of −3 V and gate-source voltage of 3 V. Based on these results, the estimated lifetime of the electrons in the graphene channel extends greatly to more than four orders of magnitude longer than that in the isolated graphene. The above results prove that this graphene/4H-SiC combined structure possesses great potential in practical UV-detection applications.

show abstract

“…Several studies [3,4] have linked the increase in 2DEG channel conductance to the change in state of charge at the surface level. Other studies [4,5] have considered the absorption in the GaN buffer layer, but the photo-generated hole transport mechanisms in this region are not explained. In addition, it has been shown that the absorption of UV photons having energy higher than the bandgap of the AlGaN and the resulting gain is due to the generation of "photovoltages" (electron-hole separation) between the surface and the channel and the buffer/substrate interface and the channel [6].…”

Section: Introductionmentioning

confidence: 99%

A new electro-optical transmission-line measurement-method revealing a possible contribution of source and drain contact resistances to GaN HEMT dynamic on-resistance

Hachem

Trémouilles

Morancho

et al. 2018

Microelectronics Reliability

View full text Add to dashboard Cite

Despite their potential in the field of power electronics, many reliability issues still affect the electrical performance of Gallium Nitride HEMT power devices and require an effort of analysis and understanding. The characterization of the on-state resistance of this transistor is necessary to understand the dynamics of some phenomena such as trapping. The degradation of this resistance has always been related to traps in the 2DEG channel, without taking into consideration possible contributions from the source and drain contacts (metal/semiconductor). In this work, resistance measurements, with and without UV illumination, are performed on three different technological options to highlight the effect of illumination on contact resistances.

show abstract

Photocurrent characteristics of two-dimensional-electron-gas-based AlGaN/GaN metal-semiconductor-metal photodetectors

Cited by 47 publications

References 16 publications

Multisensor Early Warning System Applied to Environmental Management

Multisensor Early Warning System Applied to Environmental Management

High‐Responsivity Graphene/4H‐SiC Ultraviolet Photodetector Based on a Planar Junction Formed by the Dual Modulation of Electric and Light Fields

A new electro-optical transmission-line measurement-method revealing a possible contribution of source and drain contact resistances to GaN HEMT dynamic on-resistance

Contact Info

Product

Resources

About