Enhancement-Mode Tri-Gate Nanowire InAlN/GaN MOSHEMT for Power Applications

Improved Electrical and Deep-UV Sensing Characteristics of Al2O3-Dielectric AlGaN/AlN/SiC MOS-HFETs

“…The epitaxial and bandgap engineering can be realized by employing the mature growth techniques of metal organic chemical vapor deposition (MOCVD), 1 molecular beam epitaxy, 2 and hydride vapor phase epitaxy. 3 Devices based on AlGaN/GaN [4][5][6][7] and InAlN/GaN [8][9][10][11] heterostructures have exhibited high gain, high power, and high frequency performances, suitable for microwave 12 or power switching 13 applications. Nevertheless, in order to meet the immediate needs for future development of car electronics, 14 devices capable of showing good high-voltage power switching performance have stimulated the research of ultra-widegap channel design.…”

Selective Area Epitaxy of GaN Nanostructures: MBE Growth and Morphological Analysis

“…Group III-nitride nanostructures have emerged as a promising platform for a number of application areas including optoelectronics, − power electronics, sensing, , and photocatalysis. , In the optoelectronics area, such nanostructures are useful for both classical- and quantum-photonic devices operating at a wide spectral range. − Plasma-assisted molecular beam epitaxy (PAMBE) is one of the popular methods of growing nanostructures fabricated by self-assembly , under nonequilibrium growth conditions. Although self-assembled epitaxy can be performed on various low-cost substrates with a significantly large lattice mismatch, such nanostructures preferentially grow in polar c -directions and result in random nucleation with a large density of point defects .…”

“…Group III-nitride nanostructures have emerged as a promising platform for a number of application areas including optoelectronics, 1−4 power electronics, 5 sensing, 6,7 and photocatalysis. 8,9 In the optoelectronics area, such nanostructures are useful for both classical-and quantum-photonic devices operating at a wide spectral range.…”

Novel E-mode GaN high-electron-mobility field-effect transistor with a superlattice barrier doped with Mg by thermal diffusion

“…A representative GaNbased device is the enhancement mode GaN high-electronmobility field-effect transistor (E-mode GaN HEMT), which is the mainstream technology for efficient energy conversion. 3,4 Among the conventional processes used to obtain E-mode devices, p-GaN gates [5][6][7][8][9] show a more stable performance and are easier to prepare than recess gates, [10][11][12][13] as compared to Finjection [14][15][16] and other methods for E-mode devices, like regrowth of AlGaN barriers to reduce access resistances, 17 selective area sublimation of p-GaN and regrowth of AlGaN, 18 or selective-area p-type doping with ion implantation and ultra-high-pressure annealing. 19 Thus, p-GaN gates have attracted significant research attention.…”