A method for the extraction of the voltage-dependent quantum capacitance of carbon nanotubes usingab initiosimulations

Abstract

In this paper, a method to obtain the quantum capacitance of carbon nanotubes (CNTs) using ab initio simulations is presented. As an example of the usage of the proposed method, the quantum capacitance of a metallic (6,6) CNT section is calculated. The quantum capacitance is extracted for various bias voltages applied to metallic CNT interconnects in the range 0–2.5 V, which is the operating voltage range of VLSI circuits. The obtained quantum capacitance values are found to be in good agreement with the experimental values. The average Fermi velocity of electrons dependent on the bias voltage is also obtained and plotted.

Inelastic Electron Transport Through a Carbon Fullerene Junction

“…In recent years, the experimental and theoretical studies of molecular junctions have received much attention due to the number of novel and promising physical characteristics such as conductance quantization, the nonlinear current-voltage characteristics, negative differential resistance (NDR), giant magnetoresistance (GMR), tunnel magnetoresistance (TMR), and the Kondo effect [1][2][3][4][5][6][7][8][9][10]. These physical characteristics have found important applications in prototype devices as the readheads of modern hard disk drives, nonvolatile semiconductor memory, information processing, molecular switches, logic cells, and memory and other electronic applications on the nanoscale [11,12].…”