A methodology for modeling lateral parasitic transistors in smart power ICs

Oehmen, J.; Hedrich, Lars; Olbrich, Markus; Barke, Erich

doi:10.1109/bmas.2005.1518181

Cited by 4 publications

(1 citation statement)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This option requires a complex mathematical formulation that cannot be easily extended to more complex problems or geometries when drift current has an important role and it requires a dedicated software that cannot be integrated with actual circuit simulators and Process Design Kits (PDK) of foundries. On the other side, the most promising approach to integrate minority carriers simulation in circuit simulators is the one proposed by Oehmen et al [8]. It consists to mesh the substrate in spheres and solve the semiconductor equations by means of Kirchhoff laws.…”

Section: Introductionmentioning

confidence: 99%

Substrate modeling to improve reliability of high voltage technologies

Stefanucci¹,

Buccella²,

Moursy³

et al. 2015

2015 IEEE 20th International Mixed-Signals Testing Workshop (IMSTW)

View full text Add to dashboard Cite

In Smart Power ICs there is the need of new substrate models to be integrated in the design flow of power circuits. This work reports the latest results regarding the substrate modeling methodology based on three-dimensional lumped components extraction of diodes, resistors and contacts. The substrate network including lateral and vertical parasitic bipolar transistor can be automatically created from any chip layout including temperature and geometry variations. In such a way fast dc and transient analysis can be carried out in early design stages to improve reliability of high voltage ICs. Since the high variability and complexity on modern Smart Power technologies, a flexible model is required. This work discusses all the features related to technology variations. Circuit simulator results are then compared with TCAD simulations.

show abstract

Section: Introductionmentioning

confidence: 99%