A Methodology for the Design of Capacitive Feedback LNAs based on the gm/ID Characteristic

Liu, Jing; Lauga-Larroze, Estelle; Subias, Serge; Fournier, Jean‐Michel; Bourdel, Sylvain; Galup, Carlos; Hameau, Frédéric

doi:10.1109/newcas.2018.8585612

Cited by 8 publications

(7 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The core stage of the LNA is shown in Figure 1. This architecture allows, in principle, the matching of the input impedance via the passive components 𝐿 " and 𝐶 $ while the stage gain is defined by the sizing of the transistor as we have done in [3] for lower frequency designs. Since there will be an output stage, neglecting 𝐶 % with respect to 𝐶 $ , the LNA gain is given by 𝐺 %'( = *+ , -.…”

Section: Capacitive Feedback Rf Lnamentioning

confidence: 99%

Design methodology of a 28 nm FD-SOI capacitive feedback RF LNA based on the ACM model and look-up tables

Britton

Lauga-Larroze

Mir

et al. 2022

Solid-State Electronics

Self Cite

View full text Add to dashboard Cite

Section: Capacitive Feedback Rf Lnamentioning

confidence: 99%

Design methodology of a 28 nm FD-SOI capacitive feedback RF LNA based on the ACM model and look-up tables

Britton

Lauga-Larroze

Mir

et al. 2022

Solid-State Electronics

Self Cite

View full text Add to dashboard Cite

“…Gate transconductance, g m , and transconductance efficiency, g m /I D , are key parameters for small-signal design [24], [25], [26]. At the same time, the second and third derivative of I D , g m2 and g m3 , determine circuit linearity performances, such as harmonic distortion, intermodulation products and compression point and thus must be accurately modeled.…”

Section: A Gate Transconductance and Its Derivatives: Numerical Deriv...mentioning

confidence: 99%

Design-Oriented All-Regime All-Region 7-Parameter Short-Channel MOSFET Model Based on Inversion Charge

et al. 2022

Self Cite

View full text Add to dashboard Cite

This paper presents a 7-parameter analytical model of the MOS transistor based on the inversion charge targeted at the development of simplified analytical circuit design methodologies that take into account the physics of the MOS transistor. The proposed design-oriented model allows for the first time to describe both the main short-channel effects of advanced nanometric technologies and the dependence of the transistor drain current on the drain voltage, while the model remains valid for all bias regimes (from weak to strong inversion) and for all operating regions (linear and saturated). A simple procedure based on the device physics is proposed to estimate the transistor model parameters for a given technology. Furthermore, analytical expressions of the current derivatives are developed targeting different design scenarios. The accuracy of the proposed model is validated by direct comparison to silicon measurements of N-MOS transistors in 28 nm FD-SOI technology for channel width of 1 µm and channel lengths of 30 nm, 60 nm and 150 nm, and also to simulations performed with an industry-standard compact model. INDEX TERMSAnalytical MOSFET modeling, charge-based MOSFET model, design-oriented MOSFET model, inversion coefficient, nonlinear distortion, short-channel effects, 28 nm FD-SOI.

show abstract

“…Capacitive feedback is reported in several LNA designs. In Kang et al (2011) and Liu et al (2018) capacitive feedback is used to reduce the size of the emitter inductor, to improve linearity and to match the input resistance to the optimum noise resistance of an inductively degenerated CE input stage of an LNA. To reduce the chip size and to avoid using small, inaccurate degeneration inductances, the source inductor is replaced by capacitive feedback but the gate inductor is maintained for noise matching in Tran et al (2011) and Wu & Shahroury (2006).…”

Section: The Ce With Capacitive Feedbackmentioning

confidence: 99%

Integrated Low Noise Amplifier with Capacitive Shunt Feedback Impedance Matching for Radio Astronomy

Bimana

Sinha

2020

PASP

View full text Add to dashboard Cite

The noise performance of integrated low noise amplifiers (LNAs) is impaired by on-chip inductors owing to their low-quality factor, especially when inductors are used in the signal path at the input, such as for the inductively degenerated common-emitter amplifier. The inductively degenerated common-emitter configuration is largely used in LNA design, owing mainly to its ability to achieve impedance and noise matching simultaneously. This paper proposes an LNA configuration that achieves impedance matching and noise matching simultaneously without an inductor in the input signal path, owing to capacitive feedback and transistor sizing. Only the resistive component of the optimum noise resistance is matched to the source resistance. The impact of the mismatch due to the reactive component to the noise figure is reduced by the ratio G s /R n . A technique initially developed for the broadband matching of a single-layer microstrip patch antenna is used for the output matching network. Using a 130 nm silicon–germanium heterojunction bipolar transistor process, simulation results indicate a noise figure of 2.3 dB, a gain of 26 dB and S 11 and S 22 that are better than −12 dB at 1.42 GHz. This frequency corresponds to the 21 cm hydrogen line. This novel multi-stage LNA can be used for the detection of electromagnetic radiation from neutral hydrogen atoms from space in radio astronomy and the proposed design methodology can be generalized to LNAs.

show abstract

A Methodology for the Design of Capacitive Feedback LNAs based on the gm/ID Characteristic

Cited by 8 publications

References 9 publications

Design methodology of a 28 nm FD-SOI capacitive feedback RF LNA based on the ACM model and look-up tables

Design methodology of a 28 nm FD-SOI capacitive feedback RF LNA based on the ACM model and look-up tables

Design-Oriented All-Regime All-Region 7-Parameter Short-Channel MOSFET Model Based on Inversion Charge

Integrated Low Noise Amplifier with Capacitive Shunt Feedback Impedance Matching for Radio Astronomy

Contact Info

Product

Resources

About