A Microelectromechanical Systems-Based Vertical Magnetometer–Accelerometer with the Modulated Frequency Difference in One Microstructure

Cho, Ji Man; Kim, Kyung Soo; An, Sengdo; Yeo, Choel Ho; Shin, Kyoung Hee; Ju, Byeong Kwon; Lee, Sang Yong; Kim, Soo Won

doi:10.1143/jjap.47.5432

Cited by 3 publications

(1 citation statement)

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“…Microelectromechanical system (MEMS) accelerometers have been extensively used in the automobile industry. In the last decade, accelerometers have acquired more applications in our daily lives such as in cell phones, 1) portable navigators, 2,3) and video games. 1,4) The requirements of consumer electronic devices for multiaxis accelerometers have obviously increased.…”

Section: Introductionmentioning

confidence: 99%

Novel Concept Design for Complementary Metal Oxide Semiconductor Capacitive Z-Direction Accelerometer

Huang

Chang

Chou

2009

jjap

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The purpose of this study is to provide a novel concept design for complementary metal oxide semiconductor (CMOS) capacitive Zdirection accelerometers. In this design, capacitance-sensing parallel plates and thin single-metal-layer springs are fabricated by chemical plasma etching. This plasma etching process utilizes a rough vacuum to shorten the mean free path of the reactive gases and increase lateral etching and undercut. Moreover, the thin single-metal-layer springs have the characteristic of a lower spring constant to increase the displacement of the proof mass. Thus, the sensitivity can be further improved. This study has established a post-CMOS chemical plasma etching process to release the accelerometer using sensing electrodes of the capacitance-sensing parallel plates. The Z -direction accelerometer has been fabricated by the standard CMOS 0.35 mm two-polycrystalline silicon four-metal (2P4M) process and a post-CMOS process of chemical plasma etching. The measurement results indicate that the sensitivity of the accelerometer is about 0.8 mV/g and the total noise floor is 4.2 mV/ ffiffiffiffiffiffi Hz p .

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