A micropower gate-bulk driven differential difference amplifier with folded telescopic cascode topology for sensor applications

Ong, G. T.; Chan, P.K.

doi:10.1109/mwscas.2010.5548698

Cited by 13 publications

(2 citation statements)

References 11 publications

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“…Fig. 10 shows the connection of the DDOA OAmp3 in the form of an instrumentation amplifier (IA) [20,21] indicating the nodes to which the input (Inp1, Inp2), control (Inp4) and NFC (Inp3) signals.…”

Section: Circuitry Of the Ddoa For Cryogenic Temperaturesmentioning

confidence: 99%

Design of low-temperature DDOAs on the elements of BiJFet array chip MH2XA030

Dvornikov¹,

Tchekhovski

Dziatlau

et al. 2018

Serb J Electr Eng

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Brief information about the new BiJFet array chip (AC) MH2XA030 intended for accelerated creation of analog integrated circuits (IC), which retain their performance under the influence of penetrating radiation and extremely low temperatures (up to minus 197 °С) is presented. The features of schematic design of two types of DDOAs (OAmp3, OAmp4) are considered. The recommendations on the schematic design of the DDOA are developed taking into account the static characteristics of the field effect and bipolar transistors of the AC under the influence of low temperatures. The amplitude-frequency response of the DDOA and the dependence of the noise voltage on the frequency of Fourier density are given. At a temperature of-197°С cryogenic amplifiers OAmp3 (OAmp4) are characterized by the following parameters: the current consumption is less than 500 μA, the input current is less than 1 fA, the voltage gain is more than 50.000 (200.000), the offset voltage is less than 200 (60) μV. The results of the circuit simulation of the instrumentation amplifier based on DDOA OAmp3 are presented.

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Section: Circuitry Of the Ddoa For Cryogenic Temperaturesmentioning

confidence: 99%

Design of low-temperature DDOAs on the elements of BiJFet array chip MH2XA030

Dvornikov¹,

Tchekhovski

Dziatlau

et al. 2018

Serb J Electr Eng

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show abstract

“…[1][2][3][4][5][37][38][39] The FB-DDA provides the solution for fully di®erential realizations of op-amp circuits where both of the op-amp inputs are°oating. [1][2][3][4][5] Fully di®erential architectures improve performance of analog and mixed analog/digital systems in terms of supply noise rejection, dynamic range, and harmonic distortion and reduce the e®ect of coupling between various blocks.…”

Section: Introductionmentioning

confidence: 99%

Sub-Volt Fully Balanced Differential Difference Amplifier

Khateb

Kumngern

Vlassis

et al. 2014

J CIRCUIT SYST COMP

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This paper presents a new CMOS structure for a fully balanced di®erential di®erence ampli¯er (FB-DDA) designed to operate from a sub-volt supply. This structure employs the bulk-driven quasi-°oating-gate (BD-QFG) technique to achieve the capability of an ultra-low voltage operation and an extended input voltage range. The proposed BD-QFG FB-DDA is suitable for ultra-low-voltage low-power applications. The circuit is designed with a single supply of 0.5 V and consumes only 357 nW of power. The proposed circuit was simulated in a 0.18-m TSMC CMOS technology and the simulation results prove its functionality and attractive parameters. An application example of a state variable¯lter is also presented to con¯rm the usefulness of the proposed BD-QFG FB-DDA.

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0.6‐V CMOS bulk‐driven instrumentation amplifier for IoMT bioimpedance analysis

Carrillo,

Ocampo‐Hidalgo,

Corbacho

et al. 2024

Circuit Theory & Apps

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An instrumentation amplifier (IA), aimed at wideband bioimpedance analysis in the low‐voltage low‐power scenario of internet of medical things (IoMT), is presented. The operation principle is based on the indirect current feedback technique, where an input and a feedback transconductor determine the voltage gain of the preamplifier. The required transconductors consist of two bulk‐driven flipped‐voltage‐follower cells and an active pseudo‐resistor, thus leading to a linear and compact implementation. The circuit has been designed and fabricated in 180 nm CMOS technology to operate with a 0.6‐V supply. Experimental results obtained from measurements on eight samples of the silicon prototype show that when the IA is programmed to have a nominal voltage gain of 11 V/V, the bandwidth is 316.2 kHz, the CMRR exceeds 63 dB, and the maximum output voltage that can be processed with a THD below –40 dB is 555 mV .

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A micropower gate-bulk driven differential difference amplifier with folded telescopic cascode topology for sensor applications

Cited by 13 publications

References 11 publications

Design of low-temperature DDOAs on the elements of BiJFet array chip MH2XA030

Design of low-temperature DDOAs on the elements of BiJFet array chip MH2XA030

Sub-Volt Fully Balanced Differential Difference Amplifier

0.6‐V CMOS bulk‐driven instrumentation amplifier for IoMT bioimpedance analysis

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