A Millimeterwave Microstrip Antenna with Micromachined Wafer-Level Stacking Structure

Yoshida, Y.; Koga, Yohei; Yamashita, Atsushi; Nishizawa, Kenji; Yokoyama, Yukio; Fujii, Yoshimi; Hamaguchi, Tsuneo; Nishino, Tomotoshi; Taguchi, Mitsuo; Takeda, M.

doi:10.1109/memsys.2006.1627939

Cited by 4 publications

(3 citation statements)

References 7 publications

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“…By vertically integrating and stacking siliconbased devices such as RF-MEMS switches [4], MEMS antennas [5,6] and MEMS phase shifters [3], the size and cost of such radar systems are expected to decrease.…”

Section: Introductionmentioning

confidence: 99%

Millimeter-wave transmission line with through-silicon via for RF-MEMS devices

Ogawa

Yuasa

Fujii

et al. 2013

IEICE Electron. Express

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Abstract:We designed and fabricated a low-loss transmission line structure with through-silicon vias (TSVs) for use in the millimeterwave region for three-dimensional packaging of radio frequency microelectromechanical system devices. High-frequency simulations were used to determine the optimum transmission line structure. A transformer was employed to compensate for the impedance mismatch between the TSVs and the coplanar waveguide. The proposed structure was fabricated using a combination of surface micromachining and the molten solder ejection method. The electrical properties of the TSVs and the transmission line were measured, and a low insertion loss of 0.7 dB at 80 GHz was achieved.

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Section: Introductionmentioning

confidence: 99%

Millimeter-wave transmission line with through-silicon via for RF-MEMS devices

Ogawa

Yuasa

Fujii

et al. 2013

IEICE Electron. Express

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“…This is because of the fact that both antenna and circuit are located at one side of the ground plane. The second category of MEMS antennas features two silicon wafers bonded to each other with a slotted ground plane in between them [7]- [10], as shown in Fig. 1(b).…”

Section: Introductionmentioning

confidence: 99%

77 GHz MEMS antennas on high-resistivity silicon for linear and circular polarization

Sallam

Soliman

Hassan

et al. 2011

2011 IEEE International Symposium on Antennas and Propagation (APSURSI)

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Two new MEMS antennas operating at 77 GHz are presented in this paper. The first antenna is linearly polarized. It possesses a vertical silicon wall that carries a dipole on top of it. The wall is located on top of silicon substrate covered with a ground plane. The other side of the substrate carries a microstrip feeding network in the form of "U-turn" that causes 180 o phase shift. This phase-shifter feeds the arms of the dipole antenna via two vertical Through-Silicon Vias (TSVs) that go through the entire wafer. The second antenna is circularly polarized and formed using two linearly polarized antennas spatially rotated with respect to each other by 90 o and excited with 90 o phase shift.Both antennas are fabricated using novel process flow on a single high-resistivity silicon wafer via bulk micromachining. Only three processing steps are required to fabricate these antennas. The proposed antennas have appealing characteristics, such as high polarization purity, high gain, and high radiation efficiency.

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“…In [3], a cavity-backed slot antenna with a dielectric resonator was implemented for single package radio applications. In addition, a microstrip patch antenna with slot-coupled feed was implemented on a wafer in 80 GHz band in micro-machining process [4]. In [5], a balun was designed on a chip to convert single ended signal to differential signal at 60 GHz.…”

Section: Introductionmentioning

confidence: 99%

A 60 GHz Rotman lens on a silicon wafer for system-on-a-chip and system-in-package applications

Lee

Kim

Cho

et al. 2009

2009 IEEE MTT-S International Microwave Symposium Digest

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As a semiconductor microfabrication process is advanced, there are needs for implementing various components on a wafer. A 60 GHz Rotman lens on a silicon wafer has been proposed for system-on-a-chip (SoC) and system-in-package (SiP) applications. The lens was fabricated on a high resistivity silicon wafer in semiconductor process. The lens has five beam ports and seven array ports. It was observed from the measurement that the phase and the amplitude of the Rotman lens are well distributed. The beam patterns were synthesized from the measured S-parameters. The beam directions are ±30˚, ±16˚, and 0˚, and the half power beam width are 15.37˚, 14.68˚, 14.53˚, 14.68˚, and 15.37˚, respectively. The feasibility of the lens on a silicon wafer has been well explored.Index Terms -Rotman lens, SoP, SiP, high resistivity silicon wafer.

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A Millimeterwave Microstrip Antenna with Micromachined Wafer-Level Stacking Structure

Cited by 4 publications

References 7 publications

Millimeter-wave transmission line with through-silicon via for RF-MEMS devices

Millimeter-wave transmission line with through-silicon via for RF-MEMS devices

77 GHz MEMS antennas on high-resistivity silicon for linear and circular polarization

A 60 GHz Rotman lens on a silicon wafer for system-on-a-chip and system-in-package applications

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