Millimeter-wave transmission line with through-silicon via for RF-MEMS devices

Ogawa, Shinpei; Yuasa, Takeshi; Fujii, Yoshihisa; Tahara, Yukihiro; Fukumoto, Hisao

doi:10.1587/elex.10.20130565

Cited by 8 publications

(6 citation statements)

References 17 publications

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“…Some mmW-MEMS filters and other components have been reported in the literature. [15][16][17][18][19][20][21][22] MEMS circuits can be fabricated directly on silicon and nitride or oxide layers (e.g. Si 3 N 4 and SiO 2 ).…”

Section: Introductionmentioning

confidence: 99%

Accuracy improvement in estimation of electrical properties of millimeter-wave circuit by probe-backside reflection method

Sakamaki

Kobayashi

2022

Jpn. J. Appl. Phys.

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In this study, accuracy improvements in estimations of electrical properties of millimeter-wave devices were demonstrated using the probe-backside reflection method at frequencies up to 100 GHz. The dielectric properties of silicon wafers, with nominal resistivities from 1 Ωcm to 151 kΩcm, were preliminarily evaluated using the PBR method to determine the material parameters used in the electromagnetic simulation. The S-parameter of the mmW devices fabricated on the silicon wafers was calculated using the simulation. The calculated S-parameter was well accorded with the measured S-parameter of the devices fabricated on silicon wafers. The PBR method can provide more suitable material parameters than those calculated using the Drude model for resistive wafers with resistivities greater than 3 kΩcm. However, the accuracy was degraded compared to the Drude model in the most lossy 1–100 Ωcm wafer.

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Section: Introductionmentioning

confidence: 99%

Accuracy improvement in estimation of electrical properties of millimeter-wave circuit by probe-backside reflection method

Sakamaki

Kobayashi

2022

Jpn. J. Appl. Phys.

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“…The circuit model presents a maximum average error of 5.1% for the return loss (i.e., jS 11 j) when compared with experimental data. Furthermore, with the purpose of measuring the impact of these inter-metallic elements in the performance of RF applications [16,17,18,19,20,21], the via stack circuit model is applied here for representing a RTWO. The importance of this particular application example relies on the fact that this type of oscillators allow fulfilling the design requirements for high frequencies applications (i.e.…”

Section: Introductionmentioning

confidence: 99%

Characterization and modeling of on-chip via stacks for RF-CMOS applications

Diaz

Aranda

Torres‐Torres

et al. 2020

IEICE Electron. Express

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This work proposes an experiment-based characterization and modeling approach for interconnection channels including via stacks as vertical transitions. A daisy chain structure implemented in a 0.18 µm RFCMOS process is used for developing and verifying the validity of the proposal. The usefulness of the models is shown by assessing the impact of the vias in a practical resonant rotary traveling wave oscillator (RTWO). The oscillation frequency of the RTWO is reduced 13.7% when the via stack models are included.

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“…For the transmission lines above lossy ground excited by external electromagnetic fields, the equivalent circuits have been built in [8,9]. The overhead transmission lines are considered as the straight lines in these papers [10,11,12,13,14,15,16]. Actually, the line is not straight and does not parallel to the ground level due to the sag produced by the weight of the line, etc [17,18,19,20,21,22].…”

Section: Introductionmentioning

confidence: 99%

Equivalent circuits of transmission lines sag above lossy ground excited by external electromagnetic fields

Yang

Zhou

Yao

et al. 2019

IEICE Electron. Express

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To obtain actual responses of nonlinear terminations for the transmission lines sag above lossy ground, it imperatively need to build the equivalent circuits of transmission lines sag. In this paper, the multiconductor transmission lines sag above lossy ground are divided into a sequence of smaller segments, each of which is approximate equal height. Equivalent circuit of the transmission lines sag is composed of each segment in series. And the simplified equivalent circuit of transmission lines sag above lossy ground excited by the external electromagnetic fields is built by combined the neighboring elements. The proposed method is compared with the result obtained by the FDTD method, a good agreement is observed. And the amplitude of the response is less than the results when the transmission lines are considered as the straight lines.

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Millimeter-wave transmission line with through-silicon via for RF-MEMS devices

Cited by 8 publications

References 17 publications

Accuracy improvement in estimation of electrical properties of millimeter-wave circuit by probe-backside reflection method

Accuracy improvement in estimation of electrical properties of millimeter-wave circuit by probe-backside reflection method

Characterization and modeling of on-chip via stacks for RF-CMOS applications

Equivalent circuits of transmission lines sag above lossy ground excited by external electromagnetic fields

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