A mixed-signal load-pull system for base-station applications

Marchetti, Mauro; Heeres, R.M.; Squillante, Michele; Pelk, M.; Spirito, M.; Vreede, L.C.N. de

doi:10.1109/rfic.2010.5477381

Cited by 8 publications

(2 citation statements)

References 7 publications

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“…Figures 3 and 4 show results obtained at 94 GHz with a 0.3×8.4 µm 2 InP/GaAsSb DHBT, biased in class AB (V BE = 0.75 V, V CE = 1.6 V). For this bias point, taking into account self bias when the device is measured in large signal conditions, As can be seen from Figure 4, for this bias condition, the DHBT output power P OUT reaches 6 dBm in deep compression, thus posing no challenges in setting any active load with a 25 dBm output power (at 1 dB compression) amplifier AMP2 [22], [23].…”

Section: Measurement Examplementioning

confidence: 95%

A $W$-Band On-Wafer Active Load–Pull System Based on Down-Conversion Techniques

Teppati

Benedickter

Marti

et al. 2014

IEEE Trans. Microwave Theory Techn.

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A new W-band active load-pull system is presented. It is the first load-pull system to implement a 94 GHz load by means of an active loop exploiting frequency conversion techniques. The active loop configuration demonstrates a number of advantages that overcome the typical limitations of W-band passive tuners or conventional active open loop techniques in a cost effective way: load reflection coefficients ΓL as high as 0.95 in magnitude can be achieved at 94 GHz, thus providing a nearly full coverage of the Smith Chart. Possible applications of the setup include technology assessment, large-signal device model verification at sub-THz frequencies, and W-band MMIC design and characterization. The availability of direct and accurate load-pull measurements at W-band should prove an asset in the development of sub-THz integrated circuits. First measurements performed on high performance InP double heterojunction bipolar transistors (DHBTs) and GaN high electron mobility transistors (HEMTs) are presented.

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Section: Measurement Examplementioning

confidence: 95%

A $W$-Band On-Wafer Active Load–Pull System Based on Down-Conversion Techniques

Teppati

Benedickter

Marti

et al. 2014

IEEE Trans. Microwave Theory Techn.

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“…Active harmonic load-pull allows wide-band signals to be characterized under largesignal conditions, helping to optimize amplifier design [10]. Finally, in order to meet the fast DC drain switching time, the drain switching power MOSFETs were included on the Figure 2.…”

Section: Hpa Electrical Designmentioning

confidence: 99%

A compact two-stage 120WGaN high power amplifier for SweepSAR radar systems

Thrivikraman

Horst

Price

et al. 2014

2014 IEEE Aerospace Conference

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This work presents the design and measured results of a fully integrated switched power two-stage GaN HEMT highpower amplifier (HPA) achieving 60% power-added efficiency at over 120 W output power. This high-efficiency GaN HEMT HPA is an enabling technology for L-band SweepSAR interferometric instruments that enable frequent repeat intervals and highresolution imagery. The L-band HPA was designed using spacequalified state-of-the-art GaN HEMT technology. The amplifier exhibits over 34 dB of power gain at 51 dBm of output power across an 80 MHz bandwidth. The HPA is divided into two stages, an 8 W driver stage and 120 W output stage. The amplifier is designed for pulsed operation, with a high-speed DC drain switch operating at the pulsed-repetition interval and settles within 200 ns. In addition to the electrical design, a thermally optimized package was designed, that allows for direct thermal radiation to maintain low-junction temperatures for the GaN parts maximizing long-term reliability. Lastly, real radar waveforms are characterized and analysis of amplitude and phase stability over temperature demonstrate ultra-stable operation over temperature using integrated bias compensation circuitry allowing less than 0.2 dB amplitude variation and 2 • phase variation over a 70 • C range.

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Design of an ultra-high efficiency GaN high-power amplifier for SAR remote sensing

Thrivikraman

Hoffman

2013

2013 IEEE Aerospace Conference

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A mixed-signal load-pull system for base-station applications

Cited by 8 publications

References 7 publications

A $W$-Band On-Wafer Active Load–Pull System Based on Down-Conversion Techniques

A $W$-Band On-Wafer Active Load–Pull System Based on Down-Conversion Techniques

A compact two-stage 120WGaN high power amplifier for SweepSAR radar systems

Design of an ultra-high efficiency GaN high-power amplifier for SAR remote sensing

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