A $W$-Band On-Wafer Active Load–Pull System Based on Down-Conversion Techniques

Teppati, Valeria; Benedickter, H.; Marti, Diego; Garelli, Marco; Tirelli, Stefano; Lovblom, Rickard; Flückiger, Ralf; Alexandrova, Maria; Ostinelli, O.; Bolognesi, C.R.

doi:10.1109/tmtt.2013.2292042

Cited by 23 publications

(8 citation statements)

References 19 publications

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“…Large-signal measurements characterize the high-power capabilities of the devices at high frequencies. We performed single tone continuous-wave (CW) power measurements at 94 GHz, using an active loop load-pull setup described in [21], on single finger (0.175 × 9.4) μm 2 DHBTs biased for class-A operation. The source impedance was set to 50 , and the load impedance was swept to determine the optimal load match for best saturation output power P out,sat and PAE.…”

Section: Large-signal Measurements At 94 Ghzmentioning

confidence: 99%

InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f _MAX = 1.2 THz

Arabhavi¹,

Ciabattini²,

Hamzeloui³

et al. 2022

IEEE Trans. Electron Devices

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We report a new InP/GaAsSb double heterojunction bipolar transistor (DHBT) emitter fin architecture with a record f MAX = 1.2 THz, a simultaneous f T = 475 GHz, and BV CEO = 5.4 V. The resulting BV CEO × f MAX = 6.48 THz-V is unparalleled in semiconductor technology. Devices were realized with a 20-nm-thick compositionally and impurity graded GaAsSb-base and a 125-nm InP collector. The performance arises because the process allows: 1) a tunable base-emitter access distance down to 10 nm; 2) the use of thicker base contact metals; and 3) the minimization of parasitic capacitances and resistances via precise lateral wet etching of the base-collector (B/C) mesa. Perhaps more significantly, InP/GaAsSb DHBTs with f MAX ≥ 1 THz are demonstrated with emitter lengths as long as 9.4 μm and areas as high as 1.645 μm 2 . Such an area is >6× larger than previously reported terahertz (THz) DHBTs, representing a breakthrough in THz transistor scalability. This attractive performance level is achieved with a very low dissipated power density which makes InP/GaAsSb DHBTs well-suited for high-efficiency millimeter-and submillimeter-wave applications. Furthermore, we provide the first large-signal characterization of a THz transistor with 94 GHz load-pull measurements showing a peak power-added-efficiency (PAE) of 32.5% (40% collector efficiency) and a maximum saturated power of 6.67 mW/μm 2 or 1.17 mW/μm of emitter length in a common-emitter configuration. Devices operate stably under large-signal conditions, with voltages nearly twice higher than those for peak small-signal performance.

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Section: Large-signal Measurements At 94 Ghzmentioning

confidence: 99%

InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f _MAX = 1.2 THz

Arabhavi¹,

Ciabattini²,

Hamzeloui³

et al. 2022

IEEE Trans. Electron Devices

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“…Power measurements were conducted using the 94 GHz active load-pull system described in [15], where the load impedance is generated by an active loop exploiting frequency conversion techniques. The input is a single tone continuous wave (CW) signal.…”

Section: B Large-signal Measurementsmentioning

confidence: 99%

High Power InP/Ga(In)AsSb DHBTs for Millimeter-Wave PAs: 14.5 dBm Output Power and 10.4 mw/μm² Power Density at 94 GHz

et al. 2022

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We report the 94 GHz large-signal load-pull performance of (0.3 × 9) μm 2 InP/Ga(In)AsSb double heterojunction bipolar transistors (DHBTs) in the common-emitter (CE) and common-base (CB) configurations. Both configurations were implemented side-by-side on either 20-nm-thick graded GaAsSbor GaInAsSb-base layers. A measured record saturated output power P OUT,SAT = 14.5 dBm with a corresponding power density 10.4 mW/μm 2 were achieved in the GaInAsSb-base CB configuration. The performance follows from i) the higher power gain in the CB topology and, ii) the superior BV CEO and BV CBO breakdown voltages obtained with the quaternary base which allow degradation-free operation at higher voltages. Load-pull contours show a combination of high output power and power gain in the proximity of 50 for a wide range of load impedances. In contrast, CB InP/GaAsSb DHBTs deliver P OUT,SAT = 10.6 dBm and 4.3 mW/μm 2 . For all devices considered here, CB operation improves transistor robustness against high-power device degradation. The present work provides the first report on the power performance of quaternary InP/GaInAsSb DHBTs in CE/CB topologies, with comparison to ternary InP/GaAsSb DHBTs.INDEX TERMS InP/Ga(In)AsSb, double heterojunction bipolar transistors (DHBTs), common-emitter (CE), common-base (CB), load-pull measurements, maximum output power, power gain, power density.This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination. This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination.

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“…After de-embedding, the corresponding performance consists of f T / f MAX = 141/232 GHz. In terms of large-signal performance, 94 GHz load-pull measurements on a 2 × 50 µm device biased at (V DS , V GS ) = (9V, -1.2V) carried out using the system described in [8] reveal a maximum power gain of 6 dB, a peak power-added-efficiency (PAE) of 9.2 % with an associated power gain of 3.2 dB and output power of 0.8 W/mm. The transistor saturated output power of 1.35 W/mm.…”

Section: Mmic Technologymentioning

confidence: 99%

<inline-formula> <tex-math notation="LaTeX">$W$ </tex-math> </inline-formula>-Band MMIC Amplifiers Based on AlInN/GaN HEMTs Grown on Silicon

Marti

Lugani

Carlin

et al. 2016

IEEE Electron Device Lett.

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We demonstrate W-Band MMIC amplifiers based on AlInN/GaN HEMTs grown on Silicon. Our MMIC process was fully characterized to 110 GHz and a process design kit (PDK) generated to enable circuit design. A fabricated two-stage amplifier with an output device width of 100 µm shows a saturated output power of 18.3 dBm and a gain of 8.2 dB at 94 GHz with input/output return losses of -10 dB or better from 90 to 100 GHz. A simulation model confirmed by experimental data revealed that performance is limited by current collapse and that a doubling of output power could be possible by resolving collapse limitations, showing the considerable potential of GaN-on-Si HEMT technology for low-cost millimeter-wave power electronic applications. Index Terms-AlInN/GaN-on-Si, HEMTs, MMIC, multistage amplifiers, W-band.

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A $W$-Band On-Wafer Active Load–Pull System Based on Down-Conversion Techniques

Cited by 23 publications

References 19 publications

InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f _MAX = 1.2 THz

InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f _MAX = 1.2 THz

High Power InP/Ga(In)AsSb DHBTs for Millimeter-Wave PAs: 14.5 dBm Output Power and 10.4 mw/μm² Power Density at 94 GHz

<inline-formula> <tex-math notation="LaTeX">$W$ </tex-math> </inline-formula>-Band MMIC Amplifiers Based on AlInN/GaN HEMTs Grown on Silicon

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A $W$-Band On-Wafer Active Load–Pull System Based on Down-Conversion Techniques

Cited by 23 publications

References 19 publications

InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f MAX = 1.2 THz

InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f MAX = 1.2 THz

High Power InP/Ga(In)AsSb DHBTs for Millimeter-Wave PAs: 14.5 dBm Output Power and 10.4 mw/μm2 Power Density at 94 GHz

<inline-formula> <tex-math notation="LaTeX">$W$ </tex-math> </inline-formula>-Band MMIC Amplifiers Based on AlInN/GaN HEMTs Grown on Silicon

Contact Info

Product

Resources

About

InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f _MAX = 1.2 THz

InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f _MAX = 1.2 THz

High Power InP/Ga(In)AsSb DHBTs for Millimeter-Wave PAs: 14.5 dBm Output Power and 10.4 mw/μm² Power Density at 94 GHz