A Model for Boron Deposition in Silicon Using a BBr3 Source

Abstract

The sheet resistance and junction depth as a function of time at various temperatures have been obtained for the deposition of boron in silicon by using a BBr~ liquid source. A simulation program incorporating a more realistic moving boundary condition is developed to analyze the deposition process under oxidizing atmosphere. By fitting numerical solutions to experimental data, the moving interface velocity and diffusion coefficient are determined. The profile of deposited layers as a function of doping gas composition can be modeled by the change of silicon selfinterstitial concentration. The solid solubility of boron in silicon as a function of temperature has been determined. Different surface concentrations corresponding to different thicknesses of the boron-rich layer can be explained by the translation of the BRL-Si interface. * Electrochemical Society Active Member. Key words: diffusion, boron deposition, BBr8 source. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.6.218.72 Downloaded on 2015-04-13 to IP

"Analytical Modelling of the Boron Diffusion and Etching Process for the Accurate Design and Fabrication by Bulk Micromachining Technology of the Silicon Capacitive Pressure Sensors for Biomedical Applications"

“…[19]) and BBr 3 source (ref. [20]), determined by electrical sheet resistivity method, compared with the normalized profiles theoretically deduced in this paper for D=Do(C/Co) and D=Do(C/Co) 1/2 respectively.…”

“…D~const. Such a behavior can be observed in Figure 1, where experimental results on boron diffusion at high concentration from non-oxidizing [17,18] and oxidizing diffusion sources [19,20] are compared with theoretical profiles obtained by simulation, as it is explained below.…”