A model for reactive ion etching of PZT thin films

Suchaneck, G.; Tews, R.; Gerlach, Gerald

doi:10.1016/s0257-8972(99)00101-2

Cited by 13 publications

(6 citation statements)

References 29 publications

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“…There were several works reported on the dry etching properties of the PZT thin films using fluorine-, chlorine-, and bromine-based binary gas mixtures. [3][4][5][6][7][8][9] All these works give similar results on the behavior of the PZT etching rate versus the main operating parameters (input power, bias power, and gas pressure), but different results on the effects of gas mixing ratios. In particular, Chung 3) and Efremov et al 4) reported an almost constant PZT etching rate up to 80% Ar in Cl 2 /Ar plasmas.…”

Section: Introductionmentioning

confidence: 83%

Etching Characteristics and Mechanisms of Pb(Zr,Ti)O₃, Pt, and SiO₂ in an Inductively Coupled HBr/Cl₂ Plasma

Kwon¹,

Efremov

Kim³

et al. 2011

Jpn. J. Appl. Phys.

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An investigation of the etching characteristics of Pb(Zr,Ti)O3 (PZT), Pt, and SiO2 in an inductively coupled HBr/Cl2 plasma as functions of gas mixing ratio at constant total gas pressure (6 mTorr), gas flow rate (40 sccm), input power (700 W), and bias power (300 W) was carried out. It was found that the PZT etching rate exhibits a maximum of 23.8 nm/min at 60% Cl2, while the highest PZT/SiO2 and PZT/Pt etching selectivities correspond to 20 and 40–60% Cl2, respectively. Plasma diagnostics by a double Langmuir probe and a global (zero-dimensional) plasma model provided the data on plasma parameters, densities and fluxes of plasma active species. It was considered that the PZT etching process appears in the neutral-flux-limited or transitional regime of an ion-assisted chemical reaction, and the nonmonotonic behavior of the PZT etch rate may result from the change in reaction probability.

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Section: Introductionmentioning

confidence: 83%

Etching Characteristics and Mechanisms of Pb(Zr,Ti)O₃, Pt, and SiO₂ in an Inductively Coupled HBr/Cl₂ Plasma

Kwon¹,

Efremov

Kim³

et al. 2011

Jpn. J. Appl. Phys.

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“…Due to its use in both ferroelectric memory [1] 1 Author to whom any correspondence should be addressed. and MEMS applications [2], etching processes for thin film PZT based on reactive ion etching (RIE) using high-density plasma systems have been widely explored and optimized [3][4][5][6][7][8]. While RIE can provide reasonable etch anisotropy for thin film PZT, etch rates are generally below several hundred nanometers per minute [5,7,9,10], far too slow for processing bulk PZT substrates.…”

Section: Introductionmentioning

confidence: 99%

Microfabrication of bulk PZT transducers by dry film photolithography and micro powder blasting

Misri

Hareesh

Yang

et al. 2012

J. Micromech. Microeng.

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A facile fabrication process for bulk PZT microsystems using dry film photoresist and micro powder blasting is presented. Bulk PZT and dry film photoresist etching characteristics are evaluated as a function of process parameters and mask dimensions using 127 μm thick PZT substrates. The resulting process simplifies microscale patterning of bulk PZT compared with existing methods, with selection of suitable etching parameter providing excellent etch rate, selectivity and anisotropy. The technique is used to fabricate two different cantilever microactuator topologies based on piezoelectric d 31 and d 33 mode actuation, demonstrating the capabilities of the patterning method for applications in bulk PZT microelectromechanical systems (MEMS).

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“…It is currently assumed that particles bombardment is primarily responsible for the etching damage whatever the process. 12,13 Both effects, the physical damage and the presence of chemical residual species on the PZT film surface, have not been studied, in particular, through electrical measurements.…”

Section: Introductionmentioning

confidence: 99%

Electrical damage induced by reactive ion-beam etching of lead-zirconate-titanate thin films

Soyer

Cattan

Rémiens

2005

Journal of Applied Physics

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Ion-beam etching of sputtered Pb͑Zr x ,Ti 1−x ͒O 3 ͑PZT͒ thin films with x equal to 0.54 grown on Pt/ TiO x / SiO 2 / Si substrates has been performed using pure Ar gas and a varying CHF 3 / Ar gas mixing ratio. The etch rate dependence on the process parameters ͑gas composition, current density, and acceleration voltage͒ has been investigated. PZT etch rate under 40% CHF 3 in Ar can reach 100 nm/ min with an acceleration voltage of 900 V and a current density of 0.7 mA/ cm 2 ͑in comparison to 35 nm/ min in pure Ar͒. A selectivity ratio of 8 has been obtained between PZT and photoresist ͑1.3 in pure Ar͒. We have evaluated the PZT surface damage by contact mode atomic force microscopy. It appears that the roughness increases less under a gas mixture than under a pure argon beam, and that the preferential etching observed at the grain boundaries under a pure argon beam disappears when we increase the proportion of CHF 3 in the gas mixture. For some etching parameters ͑current density, acceleration voltage, and gas mixing ratio͒, we have observed electrical damage. C͑V͒ and hysteresis loops P͑E͒ measurements before and after etching have demonstrated these degradations. We have noted a large decrease of the permittivity after the etching process, independently of the current density and the acceleration voltage. The ferroelectric damage was illustrated by a large increase of the average coercive field after etching in pure argon. The presence of CHF 3 in the plasma partially reduces the damage.

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A model for reactive ion etching of PZT thin films

Cited by 13 publications

References 29 publications

Etching Characteristics and Mechanisms of Pb(Zr,Ti)O₃, Pt, and SiO₂ in an Inductively Coupled HBr/Cl₂ Plasma

Etching Characteristics and Mechanisms of Pb(Zr,Ti)O₃, Pt, and SiO₂ in an Inductively Coupled HBr/Cl₂ Plasma

Microfabrication of bulk PZT transducers by dry film photolithography and micro powder blasting

Electrical damage induced by reactive ion-beam etching of lead-zirconate-titanate thin films

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A model for reactive ion etching of PZT thin films

Cited by 13 publications

References 29 publications

Etching Characteristics and Mechanisms of Pb(Zr,Ti)O3, Pt, and SiO2 in an Inductively Coupled HBr/Cl2 Plasma

Etching Characteristics and Mechanisms of Pb(Zr,Ti)O3, Pt, and SiO2 in an Inductively Coupled HBr/Cl2 Plasma

Microfabrication of bulk PZT transducers by dry film photolithography and micro powder blasting

Electrical damage induced by reactive ion-beam etching of lead-zirconate-titanate thin films

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Etching Characteristics and Mechanisms of Pb(Zr,Ti)O₃, Pt, and SiO₂ in an Inductively Coupled HBr/Cl₂ Plasma

Etching Characteristics and Mechanisms of Pb(Zr,Ti)O₃, Pt, and SiO₂ in an Inductively Coupled HBr/Cl₂ Plasma