2018
DOI: 10.1002/9781119423829.ch3
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A Model for the Numerical Simulation of Liquid Silicon Infiltration into Porous Carbon/Carbon Preforms

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Cited by 1 publication
(2 citation statements)
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“…For this system, numerical studies provide the best prediction of optimal parameters for minimum conversion time. [14] 0.06 The greatest infiltration height is shown for the Co-Si alloy occurring at 62.5% of silicon. The infiltrations are 0.056685 m and 0.226738 m for 5 µm and 10 µm, respectively.…”
Section: Resultsmentioning
confidence: 96%
See 1 more Smart Citation
“…For this system, numerical studies provide the best prediction of optimal parameters for minimum conversion time. [14] 0.06 The greatest infiltration height is shown for the Co-Si alloy occurring at 62.5% of silicon. The infiltrations are 0.056685 m and 0.226738 m for 5 µm and 10 µm, respectively.…”
Section: Resultsmentioning
confidence: 96%
“…Figure 1 illustrates an experimental setup; describing the infiltration process within the capillary of the porous carbon performed by molten metalsilicon (M-Si) using a conventional furnace in a vacuum. [13,14] To investigate the infiltration kinetics, study of this process is essential, by assuming that the formation of SiC at interface only depends on the Si content rather than C, the threshold activity, a si (SiC), can be calculated using the following equations: [15][16][17][18][19][20][21] Si (in liquid Co) + C(s) → SiC(s),…”
Section: Introductionmentioning
confidence: 99%