A model for vibrational properties of the atomic interface in A/B fcc metals

Phonons transmission by thin films sandwiched between two similar fcc structures

“…Given an incident elastic wave mode i from the left reservoir onto the interfacial region, the resulting Cartesian components a of the displacement fieldũ 0 a ðn; m; sÞ, for each fcc site, may be expressed using the matching approach [10][11][12][13][14][15], as the sum of the contributions coming from the incident elastic wave and from the fields backscattered at the nanojunction boundary, at the same frequency and wave-vector components u 0 a ðn; m; sÞ ¼ g n…”

“…There are a number of theoretical methods to deal with the effects of different type of atomic inhomogeneities on vibration properties. The matching method we use in our work has been extended with success to study the vibration states and transmission/reflection of elastic waves at isolated nanostructures in several disordered systems [10][11][12][13][14][15]. This technique allows us to deal with both aspects the localization of phonon modes and the scattering of elastic waves within the same mathematical framework.…”