A model of a narrow-width MOSFET including tapered oxide and doping encroachment

Akers, L.A.; Beguwala, M.; Custode, F.Z.

doi:10.1109/t-ed.1981.20635

Cited by 47 publications

(1 citation statement)

References 11 publications

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“…It increases the V th value of the FOX MOSFET without field implantation 19 and reduces dopant encroachment, which can cause V th shift on narrow devices. 20 Dual gate oxidation with a compromised gate dielectric.-Certain CMOS circuits, such as level shifters, must operate at two voltages to convert a low input voltage to a high output voltage. In this study, low-voltage (LV) and high-voltage (HV) MOSFETs were fabricated through the dual gate oxidation process.…”

Section: Methodsmentioning

confidence: 99%

Design, Process, and Characterization of Complementary Metal–Oxide–Semiconductor Circuits and Six-Transistor Static Random-Access Memory in 4H-SiC

Hung¹,

Tsui²,

Tsai³

et al. 2022

ECS J. Solid State Sci. Technol.

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In this study, the performance of complementary metal–oxide–semiconductor (MOS) circuits fabricated on SiC substrates was investigated by designing several digital and analog circuits, and a unique process flow was developed to integrate n-type MOS (NMOS) and p-type MOS (PMOS) transistors with low and high threshold voltages (Vth) into a single chip. A detailed process flow with local oxidation of SiC isolation and a dual gate oxide with a compromised gate dielectric are presented. The performance of NMOS field-effect transistors (FETs) and PMOSFETs with low and high Vth were characterized in detail. Lateral MOS capacitors were also fabricated in the same chip to explore the characteristics of the gate dielectric. Several common logic gate components were fabricated and tested at elevated temperatures to demonstrate the normal function of these elements in a digital circuit. Static random-access memory (SRAM) cells were designed and optimized through simulation. Characterizations of all the circuit blocks are presented to demonstrate the capability of these circuits in harsh environments.

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Section: Methodsmentioning

confidence: 99%