A model system for two-dimensional and three-dimensional photonic crystals: macroporous silicon

Schilling, Jörg; Wehrspohn, Ralf B.; Birner, A.; Müller, Frank; Hillebrand, R.; Gösele, U.; Leonard, S. W.; Mondia, JP; Généreux, Francis; Driel, Henry van; Kramper, P.; Sandoghdar, Vahid; Busch, Kurt

doi:10.1088/1464-4258/3/6/362

Cited by 63 publications

(31 citation statements)

References 24 publications

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“…The radius of the photoelectrochemically etched pores r etch = 190 nm was determined by the etch current. This pore pattern already forms a 2D photonic crystal [15][16][17] and the characteristic 2D band gaps were observed in reflection measurements confirming the given structure parameters a and r etch . The structure was then cleaved and a 100-m-long trench was milled out of the porous region applying a dual beam FIB (model DB235 from FEI).…”

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confidence: 69%

Three-dimensional macroporous silicon photonic crystal with large photonic band gap

Schilling

White

Scherer

et al. 2004

Applied Physics Letters

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Three-dimensional (3D) photonic crystals with 3D complete photonic band gaps exhibit interesting optical properties. First they promise to allow the inhibition of spontaneous emission 1-4 for light frequencies within the gap. Moreover, the 3D confinement of light at defects eliminates scattering losses and can therefore lead to high Q microresonators and efficient photonic crystal waveguides. Indeed 3D photonic crystals have been fabricated and are known as Yablonovites, 5,6 Lincoln log structures, 7,8 or self-ordered inverse opals.9 However, the fabrication of structures with band gaps in the near infrared or visible spectral region is difficult (Yablonovite), tedious (Lincoln log), or the structures suffer from disorder (self-ordered opals). This limits the sizes of perfect structures to a few lattice constants. To achieve a more extended Yablonovite-like 3D photonic crystal Lourtioz et al.10,11 used a combination of photoelectrochemical macropore etching in silicon and subsequent drilling of two pore sets with a focused ion beam (FIB). The FIB drilling of the etched macroporous silicon is faster than of bulk material and the problem of redeposition of milled material is minimized at the same time. We apply this technique to fabricate an alternative 3D photonic crystal structure recently proposed by Hillebrand et al., 12 which consists only of two orthogonal interpenetrating pore sets in a high index material (Fig. 1). Each pore set of our structure consists of a pattern of two-dimensional (2D) hexagonally arranged pores forming a 3D structure of orthorhombic symmetry with the primitive lattice vectors a = ͑1 0 0͒, b = ͑1/2 ͱ 3/2 1/2͒, andThe resulting first Brillouin zone resembles the slightly distorted Brillouin zone of a fcc lattice (Fig. 2(a)). We performed band-structure calculations using silicon with a refractive index of 3.5 as the matrix material applying the MPB program developed by Johnson. 13 When the ratio of the pore radius r to lattice constant a of both pore sets is r / a = 0.38, a maximum complete 3D photonic band gap of ⌬ / center = 25.1% is obtained (Fig. 2(b)). The gap appears at low normalized frequencies in the band structure between the second and third bands and should therefore be insensitive to modest disorder.We realized the described structure by first creating a 2D hexagonal pattern of etch pits applying a KOH solution on the (100) surface of an n-type silicon wafer. The position of the etch pits and the lattice constant of a = 500 nm were lithographically defined. Afterwards the structured side of the wafer was immersed in hydrofluoric acid and a photoelectrochemical etch process 14 was used to create 50-m-deep macropores in the silicon wafer starting at the etch pits. The radius of the photoelectrochemically etched pores r etch = 190 nm was determined by the etch current. This pore pattern already forms a 2D photonic crystal 15-17 and the characteristic 2D band gaps were observed in reflection measurements confirming the given structure parameters a and r etch . The structure ...

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confidence: 69%

Three-dimensional macroporous silicon photonic crystal with large photonic band gap

Schilling

White

Scherer

et al. 2004

Applied Physics Letters

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“…Next, MpSi is selectively removed from the unmasked areas by a wet chemical etching. This results in a set of deep bars of macropore rows with well-defined pore geometry [61][62][63]65].…”

Section: Macroporous Siliconmentioning

confidence: 99%

Electrochemical Etching Methods for Producing Porous Silicon

Santos

Kumeria

2015

Electrochemically Engineered Nanoporous Materials

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Porous silicon produced by electrochemical etching of silicon has become one of the most popular materials used in many scientific disciplines as a result of its outstanding and unique set of chemical and physical properties and cost-competitive fabrication processes. To understand the electrochemical mechanisms taking place in the course of the etching of silicon is a key factor to control and modify the structure of this versatile porous material. This makes it possible to produce a broad range of structures, which can range from a porous matrix to arrays of nanowires. These structures are unique and bring new opportunities for multiple research fields and applications such as biotechnology, medicine, optoelectronics, chemistry and so forth. This chapter is aimed at compiling and summarising the fundamental aspects behind the production of porous silicon structures by electrochemical and metal-assisted etching of silicon wafers. Our objective is to provide a simple but detailed overview about the fabrication process of porous silicon, with special emphasis on the different fabrication conditions and geometric and morphological features of the resulting silicon nanostructures.

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“…10. Theoretical (lines) and experimentally verified (symbols) position of the TE and TM bandedges depending on the r/a-ratio for a two-dimensional photonic crystal consisting of air pores in Si [23] current during the etching process. Therefore, it is possible to shift the photonic band-gap by keeping a constant.…”

Section: Band-gap Tuning and Switchingmentioning

confidence: 99%

Silicon-Based Photonic Crystals

Geppert¹,

Schilling²,

Wehrspohn³

et al. 2004

Topics in Applied Physics

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Abstract.We introduce the concept of silicon-based photonic crystals with the main focus on the macroporous silicon material system. photonic crystals are the optical analog to electronic semiconductors. Due to their periodic modulation of the refractive index they exhibit a band-structure for photons propagating in the Photonic crystal. This photonic band structure and in particular the photonic bandgap provide a number of interesting effects for both fundamental research as well as applied physics. These effects include, e.g., forbidden propagation of photons for certain frequencies or a huge reduction of the group velocity. The macroporous silicon material system allows the fabrication of photonic crystals with high dielectric contrast and a variety of patterns as well as defect incorporation using lithographic prestructuring and subsequent photoelectrochemical etching. The etching process will be discussed and experimental results of two-and three-dimensional photonic crystals based on macroporous silicon will be presented and their optical properties will be explored.

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A model system for two-dimensional and three-dimensional photonic crystals: macroporous silicon

Cited by 63 publications

References 24 publications

Three-dimensional macroporous silicon photonic crystal with large photonic band gap

Three-dimensional macroporous silicon photonic crystal with large photonic band gap

Electrochemical Etching Methods for Producing Porous Silicon

Silicon-Based Photonic Crystals

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