A modified forward I-U plot for schottky diodes with high series resistance

Chot, Tran

doi:10.1002/pssa.2210660159

Cited by 29 publications

(11 citation statements)

References 2 publications

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“…3 shows the plot of the Chot function as a function of the bias voltage at 293 K and 56%RH in nitrogen and methane (20 ppm, 10 min). As we can see from the figure, the decrease of the Chot function with increasing applied voltage indicates that the junction primarily controls the current-voltage characteris- tics of the diode [21,22]. Thus, the thermionic emission seems to be the dominant conduction process for the metal-polymer junctions used, as was assumed before.…”

Section: Resultsmentioning

confidence: 80%

Influence of methane in the electrical properties of polypyrrole films doped with dodecylbenzene sulfonic acid

Campos

Simões

Pereira

2007

Sensors and Actuators B: Chemical

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Section: Resultsmentioning

confidence: 80%

Influence of methane in the electrical properties of polypyrrole films doped with dodecylbenzene sulfonic acid

Campos

Simões

Pereira

2007

Sensors and Actuators B: Chemical

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“…Due to the presence of the interfacial layer between the silicide and the semiconductor, the forward saturation current across the Schottky junction increases and thus the Schottky diode becomes nonideal. 17 The change in ideality factor is related to the variation in the properties of the interfacial layer and may be predicted by Eq. ͑12͒ ͑Ref.…”

Section: Parameter Extractionmentioning

confidence: 99%

“…16 The interface states and defects act as recombination centers giving rise to an excess current which causes the deviation from the ideal thermionic emission at a low temperature and low bias. 17 The interface trap density for the diodes was extracted from the roomtemperature C-V measurements performed using the high-frequency-low-frequency technique 18 and a D it of 1.1ϫ 10 12 eV −1 cm −2 was obtained.…”

Section: Parameter Extractionmentioning

confidence: 99%

“…Furthermore, it requires a detailed knowledge of effective electron mass ͑m * ͒ and no such report is available for a Ti-silicided contacts on silicon. Following Chot 17 and Bennet, 18 the effective Richardson constant, A * , was determined using the modified Norde method. 7 The value of extracted effective Richardson constant was found to be 8.93ϫ 10 4 A m −2 K −2 for the Ti-silicided Schottky diode.…”

Section: Parameter Extractionmentioning

confidence: 99%

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Quantum-mechanical modeling of current-voltage characteristics of Ti-silicided Schottky diodes

Saha

Dimitriu

Horsfall

et al. 2006

Journal of Applied Physics

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Based on the interfacial-layer and quantum-mechanical (QM) carrier transport approach, a theoretical model is proposed to predict the anomalous behavior of low-temperature current-voltage (I-V) characteristics of Ti-silicided Schottky diodes. Physical parameters such as barrier height, ideality factor, series resistance, and effective Richardson constant of silicided Schottky diodes are extracted from the forward experimental I-V characteristics. Simulations of both the forward and reverse I-V characteristics have also been performed using extracted parameters. Results are compared with the models, such as, thermionic-emission-diffusion and thermionic-emission with barrier lowering reported in the literature. It is shown that for Ti-silicided Schottky diodes, the use of QM transport model provides a better agreement with the experimental data.

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“…The Richardson constant A* and barrier height B were extracted from I -V measurements taken at several temperatures T, using the modified Norde function, 8 …”

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confidence: 99%

Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment

Miller

Schaadt

et al. 2003

Applied Physics Letters

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An electrochemical surface treatment has been developed that decreases the reverse-bias leakage current in Schottky diodes fabricated on GaN grown by molecular-beam epitaxy (MBE). This treatment suppresses current flow through localized leakage paths present in MBE-grown GaN, while leaving other diode characteristics, such as the Schottky barrier height, largely unaffected. A reduction in leakage current of three orders of magnitude was observed for Schottky diodes fabricated on the modified surface compared to diodes fabricated on the unmodified surface for reverse-bias voltages as large as −20 V. In addition to suppressing reverse-bias leakage, the surface treatment was found to improve substantially the ideality factor of the modified surface diodes compared to that of unmodified surface diodes, suggesting that such a surface modification process could be useful for a variety of GaN-based electronic devices.

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A modified forward I-U plot for schottky diodes with high series resistance

Cited by 29 publications

References 2 publications

Influence of methane in the electrical properties of polypyrrole films doped with dodecylbenzene sulfonic acid

Influence of methane in the electrical properties of polypyrrole films doped with dodecylbenzene sulfonic acid

Quantum-mechanical modeling of current-voltage characteristics of Ti-silicided Schottky diodes

Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment

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