A modular concept for the circuit simulation of bipolar power semiconductors

A new approach for physical-based modelling of bipolar power semiconductor devices

“…Knowledge of hole/electron concentration in that region is crucial but it is still a challenge for model designers [1,2].…”

“…Although it is adequate for most circuit simulations model is inadequate for predicting dynamic carrier distribution [6]. Goebel [7] and Metzner et al [2] developed hybrid models where carrier distribution is calculated by a numerical routine that is linked to circuit simulator. With this approach it is possible to achieve accurate results (typical of numerical models) but model implementation becomes a hard task [5,6].…”

Physically based 2D compact model for power bipolar devices

“…1D compact models have been presented in literature [3][4][5] and successfully used to represent GTOs and IGBTs. However, to correctly describe the static and dynamic behaviour of the IEGT a 2D model is required since conductivity modulation and non-quasi static charge storage effects dominate the operation of this device and its operation is two dimensional in nature.…”

A new SPICE model of power P-I-N diode based on asymptotic waveform evaluation

“…As the diode model available in SPICE [1] is unable to predict the actual characteristics of pi-n structures, a number of new power diode models have been recently proposed including macro-modeling [2]- [4], numerical approaches [5]- [7], and detailed physical modeling [8]- [11]. These methods, however, are either based on semiempirical relations (and are hence valid only in a narrow range of operating conditions) or require heavy numerical computations or even do not include important effects, such as emitter recombination.…”