Physically based 2D compact model for power bipolar devices

Igić, Petar; Towers, M.S.; Mawby, P.A.

doi:10.1002/jnm.535

Cited by 4 publications

(8 citation statements)

References 5 publications

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“…This configuration can be compared with real cases to a wire-bonding crack or lift-off localized at the pad contact of the wire-bonding [12][13] or top metallization degradation [14][15], both cases illustrated in figure 11. Figure 11.…”

Section: A Consideration Of Wire-bondings Lift-off or Top Metallizatmentioning

confidence: 99%

“…Figure 11. Wire-bonding lift-off and crack (left) [12][13] and contact surface degradation after power cycling ageing (right) [14][15] impacting on a group of elementary cells It is needed to point out, due to the dimension ratio between an elementary cell and a wire-bonding pad surface, that each cell from the structure depicted in figure 9 can also be considered as a group of elementary cells. Indeed, a wirebonding will not be connected to a single cell but to a group of elementary cell.…”

Section: A Consideration Of Wire-bondings Lift-off or Top Metallizatmentioning

confidence: 99%

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Failure initiation of IGBT due to emitter contact degradation: A 2D finite elements electro-thermal multi-cell simulation approach under hard switching, short-circuit and avalanche operations

Boubkari

Azzopardi

Théolier

et al. 2013

2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)

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This paper reports, for the first time, the internal physics of IGBT under severe switching conditions based on 2D finite elements multi-cell device simulation pointing out the advantages of such approach particularly in the case of a packaging degradation due to wire-bonding lift-off or top metallization ageing. The results show that the multi-cell simulation highlights intercellular electro-thermal phenomena which may lead the IGBT into failure. A full internal analysis allows to focus on the main internal physics parameters and to provide useful information on the device failure initiation and interesting issue to increase the device robustness for devices designers.

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Section: A Consideration Of Wire-bondings Lift-off or Top Metallizatmentioning

confidence: 99%

Section: A Consideration Of Wire-bondings Lift-off or Top Metallizatmentioning

confidence: 99%

Failure initiation of IGBT due to emitter contact degradation: A 2D finite elements electro-thermal multi-cell simulation approach under hard switching, short-circuit and avalanche operations

Boubkari

Azzopardi

Théolier

et al. 2013

2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)

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“…However, quasi-neutrality ðp % nÞ where D a represent the ambipolar diffusion constant and t A represent the ambipolar carrier lifetime. Our approach [9,10] is to model the ADE describing the internal plasma charge distribution using two exponential functions based on the ambipolar diffusion length…”

Section: Physically Based Igbt Compact Modelmentioning

confidence: 99%

“…Physically based compact model [9,10] has been selected as a switching device in the inverter circuit. This model used the full ambipolar diffusion equation (ADE) solution and solving numerically the basic drift-diffusion equations.…”

Section: Physically Based Igbt Compact Modelmentioning

confidence: 99%

A fast power loss calculation method for long real time thermal simulation of IGBT modules for a three-phase inverter system

Zhou¹,

Khanniche²,

Igić³

et al. 2005

Int. J. Numer. Model.

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SUMMARYA fast power losses calculation method for long real time thermal simulation of IGBT module for a threephase inverter system is presented in this paper. The speed-up is obtained by simplifying the representation of the three-phase inverter at the system modelling stage. This allows the inverter system to be simulated predicting the effective voltages and currents whilst using large time-step. An average power losses is calculated during each clock period, using a pre-defined look-up table, which stores the switching and on-state losses generated by either direct measurement or automatically based upon compact models for the semiconductor devices. This simulation methodology brings together accurate models of the electrical systems performance, state of the art-device compact models and a realistic simulation of the thermal performance in a usable period of CPU time and is suitable for a long real time thermal simulation of inverter power devices with arbitrary load. Thermal simulation results show that with the same IGBT characteristics applied, the proposed model can give the almost same thermal performance compared to the full physically based device modelling approach.

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“…(1) one is using the PWM based average power losses, (2) the second one is using the instantenous power loss that is implement based on a physically based compact model [10][11]. Fig.2 shows the instantanouse drain current of IGBT, and DC bus voltage is 500, load resistor 5 and the PWM switching frequency is 5kHz.…”

Section: Average Power Loss Of Each Pwm Switching Freqency For Thementioning

confidence: 99%

Dynamic Thermal Simulation of Power Devices Operating with PWM Signals

Zhou

Khanniche

Igić

et al.

2006 25th International Conference on Microelectronics

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Fast power devices thermal simulation method based on averaging power losses over each cycle of PWM switching frequency is presented in this paper. For implementing a long real time dynamic thermal simulation of power devices, device power losses during transient process and static characteristics are defined as a function of device conduction current and junction temperature, and are represented by a lookup table. By carrying out the circuit electrical simulation, the device conduction current can be obtained. By combining the device conduction currents, global device temperature (GDT) and the data from the lookup table, the average power loss over each cycle of PWM switching frequency is then calculated for carrying out the thermal simulation. With the proposed method, a relative large simulation time step can be employed and simulation speed can be increased dramatically. The method is suitable for a long real time thermal simulation for complex power electronics systems.

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Physically based 2D compact model for power bipolar devices

Cited by 4 publications

References 5 publications

Failure initiation of IGBT due to emitter contact degradation: A 2D finite elements electro-thermal multi-cell simulation approach under hard switching, short-circuit and avalanche operations

Failure initiation of IGBT due to emitter contact degradation: A 2D finite elements electro-thermal multi-cell simulation approach under hard switching, short-circuit and avalanche operations

A fast power loss calculation method for long real time thermal simulation of IGBT modules for a three-phase inverter system

Dynamic Thermal Simulation of Power Devices Operating with PWM Signals

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