A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter

Broekaert, T.P.E.; Brar, B.; Wagt, J.P.A. van der; Seabaugh, Alan; Morris, Frank; Moïse, T. S.; Beam, Edward; Frazier, G.

doi:10.1109/4.711333

Cited by 205 publications

(73 citation statements)

References 13 publications

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“…Analogue-to-digital converters have also been demonstrated that operate at speeds of 2 giga-samples per second for a 220 MHz input signal. [96] The major problem at present with III±V RTDs is the uniformity required for production. [97] The tunneling current can change substantially with a few monolayers difference in tunnel barrier thickness and at present III±V epitaxy cannot reach required tolerances.…”

Section: Quantum Effect Devicesmentioning

confidence: 99%

Silicon-Germanium Strained Layer Materials in Microelectronics

Paul¹

1999

Adv. Mater.

140

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Section: Quantum Effect Devicesmentioning

confidence: 99%

Silicon-Germanium Strained Layer Materials in Microelectronics

Paul¹

1999

Adv. Mater.

140

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“…They are today considered the most mature type of quantum-effect devices, already operating at room temperature, and being promising candidates for future nanoscale integration. The incorporation of tunnel diodes into transistor technologies has demonstrated improved circuit performance: higher circuit speed, reduced component count, and/or lowered power consumption [1], [2].…”

Section: Introductionmentioning

confidence: 99%

Design of RTD-Based NMIN/NMAX Gates

Núñez

Quintana

Avedillo

2008

2008 8th IEEE Conference on Nanotechnology

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Abstract-A novel implementation of NMIN/NMAX gates based on RTDs and transistors is presented. In this paper we will derive the relations that circuit representative parameters must verify to obtain a correct behaviour by means of the principles of the Monostable-to-Multistable Logic (MML). HSPICE simulations will be used to check our theoretical results.Index Terms-Resonant tunneling diodes, Multivalued logic circuits, Nanotechnology. I. INTRODUCTIONResonant tunneling diodes (RTDs) are very fast non linear circuit elements which have been integrated with transistors to create novel quantum devices and circuits. They are today considered the most mature type of quantum-effect devices, already operating at room temperature, and being promising candidates for future nanoscale integration. ). When connected in series, RTDs provide multiple-peak structures in their I-V characteristics, which make it attractive for multiple-valued logic (MVL) [5]. MVL circuit applications are based on the Monostable-to-Multistable transition Logic (MML) [6], an extension of the binary MOBILE. Logic operation is based on the sequential switching (in increasing order of peak current values) of the RTDs connected in series, which is produced when the bias voltage rises to an appropriate value. Logic functionality is achieved by embedding an input stage (compound-semiconductor transistors, HEMT or HBT) which modifies, according the applied input signal, the peak current of some of the RTDs.The MIN and the MAX functions are applied in the multivalued logic signal processing and they are also useful for analog signal processing [7]. In this paper, we present the architecture of a two-input negated MIN (NMIN) and negated MAX (NMAX) gates by using RTDs and HFET transistors.These gates operate properly in a certain frequency range; that is, they exhibit both a minimum operating frequency and a maximum one. The frequency range depends on the gate fan-out. From the design point of view it should be desirable to have gates without the minimum limit (correct operation from DC up to a maximum frequency). A correct DC operation of this kind of structures requires a proper choice of the size of the RTDs and the transistors. This paper analytically studies this problem and obtains relations between RTD and transistor parameters that ensure a correct operation of the circuit. In order to simplify the analysis we have resorted to piecewise linear descriptions for the RTD driving point characteristics (in red in Fig. 1a). Fig. 1b shows the structure of the NMIN/NMAX circuit based on MML composed by two NDR devices, the driver and the load. The load consists of the series connection of two RTDs whereas the driver is composed by two series connected RTDs and two HFET transistors. The high value of the bias voltage, V bias = V bias H , is selected in order to have two RTDs switched when it is applied. In our analysis, we have considered three specific, feasible voltage values of V in , the high ( H in V ), medium ( M i n V ) and low ( L i n V ) voltages, a...

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“…However, as the bias exceeds 0.4 V (0.25 V), the current decreases obviously. NDR is a very useful property due to its wide applications such as high-frequency oscillators [18], analog-to-digital converters [19], and logic [20]. Though NDR behavior has been found in a variety of molecular devices, it can typically only be observed at a relatively high bias [21][22][23][24].…”

Section: Figurementioning

confidence: 99%

Electronic transport properties of capped-carbon-nanotube-based molecular junctions with multiple N and B dopants

Zhao

Liu

2012

Chin. Sci. Bull.

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By applying non-equilibrium Green's function in combination with density functional theory, we investigated the electronic transport properties of capped-carbon-nanotube-based molecular junctions with multiple N and B dopants. The results show that the electronic transport properties are strongly dependent on the numbers and positions of N and B dopants. Best rectifying behavior is observed in the case with one N and one B dopants, and it is deteriorated strongly with the increasing dopants. The rectifying direction is even reversed with the change of doping positions. Moreover, obvious negative differential resistance behavior at very low bias is observed in some doping cases.carbon nanotube, rectifying, negative differential resistance, non-equilibrium Green function, density functional theory Citation:Zhao P, Liu D S. Electronic transport properties of capped-carbon-nanotube-based molecular junctions with multiple N and B dopants.

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A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter

Cited by 205 publications

References 13 publications

Silicon-Germanium Strained Layer Materials in Microelectronics

Silicon-Germanium Strained Layer Materials in Microelectronics

Design of RTD-Based NMIN/NMAX Gates

Electronic transport properties of capped-carbon-nanotube-based molecular junctions with multiple N and B dopants

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