A monolithic wide-band GaAs IC amplifier

Estreich, D.B.

doi:10.1109/jssc.1982.1051876

Cited by 17 publications

(6 citation statements)

References 15 publications

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“…Considering the articles during 1980s [16][17][18][19][20][21][22][23][24][25][26][27][28][29], usage of GaAs FET was welcomed by engineers in this decade to fabricate monolithic wideband low-noise RF amplifiers [17-19, 28, 29]. Also, the abbreviation 'LNA' was utilised for the first time [27].…”

Section: In the 1980smentioning

confidence: 99%

Ultrawideband LNA 1960–2019: Review

Shahrabadi

2021

IET Circuits, Devices & Syst

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To the best of the author's knowledge, several studies during 1960-2019 were carried out on wideband and ultrawideband LNAs just to render optimum LNAs for SAW-less Radio-Frequency Integrated Circuits (RFICs) but none of these works reviewed and taught the proceedings of these six decades, hence the lack of a comprehensive review is quite noticeable. This article specifically studies the challenges and solutions of designing UWB LNA by reviewing topologies and techniques such as inductive peaking, noise and distortion cancellation, g m -boosting, active inductor and notch filter. Its historical aspect illustrates when the idea of wideband LNA was born and how it changed to ultrawideband LNA, and its tutorial aspect discusses circuits and achievements to present optimum LNAs in Complementary MOS (CMOS), BiCMOS and High-Electron-Mobility Transistor (HEMT) technologies. This work describes the endeavours of engineers in reaching UWB LNA from narrowband LNA during six decades that have great importance as a chapter in understanding this topic because it teaches all topologies, techniques, circuits and related events in a historical narrative for trained readers who are not experts on this topic. | UWB LNA | In the 1960sWhere did the idea of 'transistorised wideband LNA' originate from? It seems that everything goes back to the 1960s when This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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Section: In the 1980smentioning

confidence: 99%

Ultrawideband LNA 1960–2019: Review

Shahrabadi

2021

IET Circuits, Devices & Syst

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“…There have been proposed circuits with over 1-GHz gains for such applications [4]- [7]. However, they need the use of costly technologies (e.g., SIMOX [4], GaAs [5]- [7]).…”

Section: Nmr Signal Preamplifiermentioning

confidence: 99%

A CMOS microcoil-associated preamplifier for NMR spectroscopy

Cherifi

Abouchi

et al. 2005

IEEE Trans. Circuits Syst. I

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For improving sensitivity of nuclear magnetic resonance (NMR) measurements, an in-field preamplifier in a low-cost CMOS process is presented. It is based on a second-generation positive current conveyor (CCII+), with an impedance-matching output stage. The circuit has been designed with optimization of key performances, such as bandwidth, noise, and offset voltage. There have also been precautions taken against potential effect of strong magnetic field under which the circuit should operate. The designed preamplifier has a voltage gain of 15 dB and a bandwidth of 100 MHz. After fabrication of the circuit, we have carried out testing work, including in-field circuit test and characterization of MOS transistors. Under 2-T magnetic field, there have not been substantial changes in overall circuit performances compared to results obtained by post-layout simulations. For an experiment of NMR measurements with and without in-field preamplifier, the circuit is coupled with a receiver micro-coil. The experiment has been to detect protons at 85.13-MHz resonance frequency under 2-T magnetic field with water sample. The obtained results have shown a 14-dB signal-to-noise ratio improvement when the preamplifier is associated with the receiver coil.Index Terms-Current conveyor, in-field preamplifier, nuclear magnetic resonance (NMR) active probe, receiver micro-coil.

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“…Currently, two technologies can reach several tens of gigahertz in frequency r뻐ge: 없As MESFETs and silicon bipol따 tr때sistors. A GaAs MESFET is similar to a CMOS MOS핸T in the physic 려 device structure, and its fast speed is due to the material, Gallium and Arsenide, used [206][207][208]. A bip이하 transistor uses the same mate때 as CMOS MOSFET, silicon, and its fast sp않d comes from the physic 와 device structure.…”

Section: Figure Pagementioning

confidence: 99%

“…Although many GaAs an외og circuits were designed already [208][209][210][211][212][213][214][215][216] at the time the GaAs OTA was designed, there were no OTAs built in this technology rep야ted yet in the literature [217,218]. The following problems we met in the design: (1) Because of the higher surface states of gallium arsenide material, the oxidation is not stable.…”

Section: Figure Pagementioning

confidence: 99%

The Design of High-Frequency Continuous-Time Integrated Analog Signal Processing Circuits

Wu¹

2000

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A monolithic wide-band GaAs IC amplifier

Cited by 17 publications

References 15 publications

Ultrawideband LNA 1960–2019: Review

Ultrawideband LNA 1960–2019: Review

A CMOS microcoil-associated preamplifier for NMR spectroscopy

The Design of High-Frequency Continuous-Time Integrated Analog Signal Processing Circuits

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