A Monolithically Integrated Segmented Linear Driver and Modulator in EPIC 0.25- $\mu$ m SiGe:C BiCMOS Platform

Rito, Pedro; Lopez, I. Garcia; Petousi, Despoina; Zimmermann, Lars; Kroh, M.; Lischke, Stefan; Knoll, D.; Mičušík, D.; Awny, A.; Ulusoy, Ahmet Çağrı; Kissinger, Dietmar

doi:10.1109/tmtt.2016.2618392

Cited by 42 publications

(20 citation statements)

References 24 publications

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“…Meanwhile, several designs based on the 45-nm SOI platform [260]- [262] have been reported, including the first single-chip processor that communicates directly using light [261]. In addition to this, IHP introduced the SiGe:C platform, which is based on the 0.25-μm BiCMOS technology, and a 13-dB extinction ratio 28-Gb/s nonreturn-to-zero (NRZ) transmitter was reported in 2016 [263].…”

Section: I N T E G R At I O Nmentioning

confidence: 99%

“…A simple example is the wavelength stabilization system design for a microresonator [269]- [271], where a dedicated thermal control loop is designed to compensate for temperature drift and errors due to fabrication tolerances. The more advanced examples are segmented modulator and driver systems [262], [263], [272]- [275], where advanced modulation formats (such as PAM-4 and QAM-16) or optical signal shaping (such as feedforward equalization) become the system requirement. The trend of this electrical-optical codesigned system may significantly broaden the application area of silicon photonics as well as dramatically change the structure of existing optoelectronic transceivers.…”

Section: I N T E G R At I O Nmentioning

confidence: 99%

“…For example, a data rate of 56-Gb/s ON-OFF keying (OOK) was achieved at 300 mW [266] fabricated with the 55-nm BiCMOS technologies, which equivalent to 5.4 pJ/bit. On the other hand, several designs [259], [262], [263], [272]- [275] adopted advanced modulation formats (such as PAM-4 or PAM-16) with segmented MZM approaches, with each segment of the MZM treated as a lumped capacitive element, thus eliminating the need for termination resistors. For instance, the power efficiency for segmented MZM is 0.25 pJ/bit for 40-Gb/s PAM-16 in [272].…”

Section: P O W E R E F F I C I E N C Ymentioning

confidence: 99%

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The Emergence of Silicon Photonics as a Flexible Technology Platform

et al. 2018

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| In this paper, we present a brief history of silicon photonics from the early research papers in the late 1980s and early 1990s, to the potentially revolutionary technology that exists today. Given that other papers in this special issue give detailed reviews of key aspects of the technology, this paper will concentrate on the key technological milestones that were crucial in demonstrating the capability of silicon photonics as both a successful technical platform, as well as indicating the potential for commercial success. The paper encompasses discussion of the key technology areas of passive devices, modulators, detectors, light sources, and system integration.In so doing, the paper will also serve as an introduction to the other papers within this special issue.

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Section: I N T E G R At I O Nmentioning

confidence: 99%

Section: I N T E G R At I O Nmentioning

confidence: 99%

Section: P O W E R E F F I C I E N C Ymentioning

confidence: 99%

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The Emergence of Silicon Photonics as a Flexible Technology Platform

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“…Therefore, the use of an integrated driver amplifier is desirable to decrease required input power for the modulating signal. It is shown in [19,[22][23][24] that the use of a segmented driver allows to slacken requirements for its output voltage and overcome the mismatch between the velocities of electrical and optical waves. In this solution, driver amplifier consists of several driver units that are distributed along the segmented MZM.…”

Section: Modulator Drivermentioning

confidence: 99%

Microwave Photonic ICs for 25 Gb/s Optical Link Based on SiGe BiCMOS Technology

et al. 2019

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The design, simulation and experimental results of the integrated optical and electronic components for 25 Gb/s microwave photonic link based on a 0.25 µm SiGe:C BiCMOS technology process are presented. A symmetrical depletion-type Mach-Zehnder modulator (MZM) and driver amplifier are intended for electro-optical (E/O) integrated transmitters. The optical divider and combiner of MZM are designed based on the self-imaging theory and then simulated with EM software. In order to verify the correctness of the theory and material properties used in the simulation, a short test (prototype) MZM of 1.9 mm length is produced and measured. It shows an extinction ratio of 19 dB and half-wave voltage-length product of Vπ ∙ L = ~1.5 V·cm. Based on these results, the construction of the segmented modulator with several driver amplifier units is defined. The designed driver amplifier unit provides a bandwidth of more than 30 GHz, saturated output power of 6 dBm (output voltage of Vpp = 1.26 V), and matching better than −15 dB up to 35 GHz; it dissipates 170 mW of power and occupies an area of 0.4 × 0.38 mm2. The optical-electrical (O/E) receiver consists of a Ge-photodiode, transimpedance amplifier (TIA), and passive optical structures that are integrated on a single chip. The measured O/E 3 dB analog bandwidth of the integrated receiver is 22 GHz, and output matching is better than −15 dB up to 30 GHz, which makes the receiver suitable for 25 Gb/s links with intensity modulation. The receiver operates at 1.55 μm wavelength, uses 2.5 V and 3.3 V power supplies, dissipates 160 mW of power, and occupies an area of 1.46 × 0.85 mm2.

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“…In [96], a monolithic 56 Gb/s PAM-4 transmitter is presented where the CMOS driver circuitry and segmented TW-MZM were fabricated on the same wafer. Higher voltage-swing and faster transistors available in BiCMOS pave the way for demonstration of BiCMOS driver and SiP modulator co-design for PAM-M modulation format [97,98]. In [98], a monolithic integration of the driver and optical PAM-4 modulator in BiCMOS process Figure 17: Demonstrations of electronic-photonic integrated PAM-4 transmitters: a) hybrid integration of a 3-segment MZM employing SISCAP phase shifter and a 40-nm-CMOS driver [100]; b) monolithic integration of a 2-segment MZM and a CMOS driver using a 90-nm CMOS process [96]; c) a segmented MRM and a hybrid integrated driver in 65-nm CMOS [82].…”

Section: Electronic-photonic Integrated Transmittersmentioning

confidence: 99%

Silicon photonic modulators for PAM transmissions

Shi

Sepehrian

et al. 2018

J. Opt.

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High-speed optical interconnects are crucial for both high performance computing and data centers. High power consumption and limited device bandwidth have hindered the move to higher optical transmission speeds. Integrated optical transceivers in silicon photonics using pulse-amplitude modulation (PAM) are a promising solution to increase data rates. In this paper, we review recent progress in silicon photonics for PAM transmissions.

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A Monolithically Integrated Segmented Linear Driver and Modulator in EPIC 0.25- $\mu$ m SiGe:C BiCMOS Platform

Cited by 42 publications

References 24 publications

The Emergence of Silicon Photonics as a Flexible Technology Platform

The Emergence of Silicon Photonics as a Flexible Technology Platform

Microwave Photonic ICs for 25 Gb/s Optical Link Based on SiGe BiCMOS Technology

Silicon photonic modulators for PAM transmissions

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