A Monte-Carlo calculation of the secondary electron emission of normal metals

Ganachaud, J.P.; Cailler, M.

doi:10.1016/0039-6028(79)90059-1

Cited by 125 publications

(30 citation statements)

References 46 publications

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“…Authors like Ganachaud and Cailler [3], Akkerman and Chernov [4], Ichimura and Shimizu [5], Fitting and Reinhardt [6], Ding and Shimizu [7], Joy and Luo [8] and Reimer and Senkel [9] have presented MC programs for the low energy region, taking into account elastic scattering, core ionization, and dielectric losses. In this paper we want to discuss some decisive improvements in handling the different scattering processes for Monte-Carlo calculations, especially the resonant scattering and the energy loss dispersion DE (q) in the sub-keV region.…”

Section: Introductionmentioning

confidence: 99%

Monte-Carlo Simulation of Low Energy Electron Scattering in Solids

Kuhr

Fitting

1999

phys. stat. sol. (a)

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A new Monte‐Carlo program for simulation of low energy electron scattering in solids is presented. Applications to electron microscopy and electron microprobe analysis are discussed. Elastic interactions are described by Mott cross sections within the framework of partial wave analysis (PWA) whereas the inelastic collisions are based upon the momentum dependent dynamic form factor S(q, ω). For inelastic interactions with weakly bound valence electrons, S(q, ω) is expressed in terms of the energy loss function Im {—/1ε(q, ω)} of the linear dielectric theory. On the other hand, generalized oscillator strengths (GOS) are chosen in case of excitation of tightly bound core level electrons. The electron energy range extends from several keV down to energies of about 10 eV, i.e. just above the vacuum level. Secondary electron (SE) creation and cascade processes have been included, where the SE transport has been treated in the same way as the scattering of the primary electrons.

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Section: Introductionmentioning

confidence: 99%

Monte-Carlo Simulation of Low Energy Electron Scattering in Solids

Kuhr

Fitting

1999

phys. stat. sol. (a)

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“…8 The lack of quantitative understanding concerning SE emission is partly due to the experimental difficulty to separate the generation inside the solid, transport to the surface and escape from the latter, and the fact that the SE cascade cannot be resolved experimentally. From the theoretical point of view, it is generally accepted that plasmon decay plays an essential role in the SE production mechanism, [9][10][11] but the only evidence for the contribution of plasmon decay to SE emission seems to be the ͑weak͒ features in the derivative of the SE spectrum, 9,12 which are not very well suited for a detailed investigation of the phenomenon. Such features are also observed in spectra of ion-induced electrons.…”

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confidence: 98%

Role of surface and bulk plasmon decay in secondary electron emission

et al. 2008

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The mechanism of secondary electron emission by impact of 100-eV electrons on an Al(100) surface has been investigated by measuring the secondary electron spectrum in coincidence with loss features in the spectrum of reflected electrons. Distinct peaks are observed at energies corresponding accurately to the surface and bulk plasmon energies minus the work function of the analyzer, demonstrating that plasmons excited by electron energy losses predominantly decay via creation of single-electron-hole pairs that act as a source for the secondary electron spectrum. These findings suggest a mechanism for emission of secondary electrons very similar to photoelectron (PE) emission, the difference being the step leading to electron liberation, i.e., plasmon decay in the present case versus photoionization in the case of PE

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“…Qualitatively, the theoretical Auger electron probabilities and the calculated K Auger emission intensities are in good agreement. Note, that interesting models [18,19] have been developed to give a quantitative description of the secondary electron emission from aluminium and to study the Auger electron emission. The results have been deduced from a study of the Aluminium L 23 VV Auger line and used to evaluate the backscattering factor.…”

Section: Results: Auger Emissionsmentioning

confidence: 99%

Auger electron from silicon: comparison of full Monte Carlo simulations with experiment

Chaoui

Goto

2010

Surface & Interface Analysis

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A Monte Carlo simulation approach has been developed to describe electron scattering processes from silicon in the keV and sub-keV electron energy range. Ionizations, excitations, secondary electron production, relaxation and auger emissions are considered during the simulations. In the present study, we show results concerning K and L Auger electrons. Good agreement has been found when comparing our theoretical calculations and original experimental measurements recently made by Goto et al.

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A Monte-Carlo calculation of the secondary electron emission of normal metals

Cited by 125 publications

References 46 publications

Monte-Carlo Simulation of Low Energy Electron Scattering in Solids

Monte-Carlo Simulation of Low Energy Electron Scattering in Solids

Role of surface and bulk plasmon decay in secondary electron emission

Auger electron from silicon: comparison of full Monte Carlo simulations with experiment

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