A MOS Parametric Integrator With Improved Linearity for SC &lt;inline-formula&gt; &lt;tex-math notation="TeX"&gt;$\Sigma\Delta$&lt;/tex-math&gt;&lt;/inline-formula&gt; Modulators

Seyedhosseinzadeh, B. Hoda; Nabavi, Abdolreza

doi:10.1109/tcsii.2014.2368971

Cited by 7 publications

(2 citation statements)

References 12 publications

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“…This technique effectively reduces Q s loss . A MOSCAP is a good candidate for this application, and its capabilities to improve linearity in passive integrators have been demonstrated in several works [9]- [11].…”

Section: B Complete F/v Converter (Moscaps + Current Source)mentioning

confidence: 99%

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A Temperature-Compensated 57 PPM/°C 10MHz, 2.4μW Stacked Ring Oscillator

Rodrigues

Brito

Busse

et al. 2021

2021 IEEE International Symposium on Circuits and Systems (ISCAS)

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Ring oscillators are one of the simplest, smallest and most energy-efficient topologies when it comes to clock generation. Being implemented using a chain of digital inverters, their oscillation frequency can be set by the inverters count in the chain and the delay of each inverter. This is an advantage when considering the simplicity and size, however, it is also the cause for high frequency variation with temperature. In this paper we propose an ultra-low power oscillator circuit that exploits a stack of small ring oscillators for supply current reuse and injection locking, which provides phase noise improvement. Frequency stability is achieved through a feedback loop that relies on a frequency-to-voltage converter with improved linearity and reduced temperature sensitivity based on MOS capacitors. Simulation results show that the oscillation frequency changes ±0.4% from 0 to 70ºC (57 ppm/ • C) while consuming 2.4 µW at 10 MHz, with a phase noise of -88.9 dBc/Hz at 100 kHz offset.Index Terms-Frequency to voltage converter, MOSCAPs, ring oscillator, stacked oscillator.

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Section: B Complete F/v Converter (Moscaps + Current Source)mentioning

confidence: 99%

“…In this work we further improve the principle proposed by [9] where MOSCAP capacitance is controlled by applying a body bias voltage. The used topology as presented in Fig.…”

Section: B Complete F/v Converter (Moscaps + Current Source)mentioning

confidence: 99%