A Multi-Level Gate Driver for Crosstalk Suppression of Silicon Carbide MOSFETs in Bridge Arm

Due to the extremely fast switching speed of the SiC MOSFET, its crosstalk issue is more serious than that of the Si IGBT. Therefore, in order to ensure the reliability of the SiC MOSFET converters, the crosstalk problem must be solved firstly. Most of the existing crosstalk suppression methods are aimed at decreasing the crosstalk voltage introduced by the parasitic gate-drain capacitance (Miller capacitance), ignoring the influence of other parasitic parameters on the crosstalk voltage, such as the common source inductance, which may also lead to more serious reliability problems. Thus, this paper firstly establishes the mathematical model of the switching process of the SiC MOSFET half-bridge inverter. Then, the effects of various parasitic parameters (the gate-source capacitance, the gate-drain capacitance, the common source inductance, the gate inductance, the drain inductance) on the crosstalk voltage are analyzed and modeled in detail, which is verified by experiments. Based on the analyses and models, a novel crosstalk voltage suppression circuit is proposed, which can not only suppress the crosstalk caused by the gate-drain capacitance, but also solve the crosstalk issue considering the influence of other parasitic parameters, such as the common source inductance. Finally, a double pulse test platform is established to verify the effectiveness of the designed crosstalk suppression circuit under different voltage/current conditions.

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“…After S3L is turned on, CgsL discharges through clamping branch of ML. According to equation (22), the time CgsL discharges to 0 is obtained.…”

Section: Proposal Of the Crosstalk Suppression Circuitmentioning

confidence: 99%

Modeling and Suppression of the Crosstalk Issue Considering the Influence of the Parasitic Parameters of SiC MOSFETs

Xiao-li

Zhang

et al. 2022

IEEE Access

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“…Under the influence of the negative crosstalk voltage, the negative voltage of the SiC MOSFET gate intensifies, which may lead to the SiC MOSFETs breakdown. Negative voltage and zero voltage were used for SiC MOSFET turn-off in [9], the negative voltage is used when the positive crosstalk voltage is present, while the zero voltage is used when the negative crosstalk voltage is present. In this way, the positive and negative crosstalk voltage suppression of the SiC MOSFET is achieved, but the control logic is complex and requires the provision of multilevel control signals.…”

Section: Introductionmentioning

confidence: 99%

A High Crosstalk Suppression SiC MOSFET Gate Driver

Wu,

Chen,

2023

J. Phys.: Conf. Ser.

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Fast switching speeds and high switching frequencies bring serious crosstalk problems in SiC MOSFET applications. In this paper, we design a SiC MOSFET gate driver with high crosstalk suppression capability by using a multi-level drive and active Miller clamp technology. In the design, an auxiliary branch is introduced to control the source potential of the SiC MOSFET to achieve multilevel driving. The branch has a simple structure, simple control logic, no external negative voltage supply, and adjustable negative output voltage. The proposed SiC MOSFET gate driver was designed using the Central Semiconductor Manufacturing Corporation (CSMC) 0.8 μm BCD high voltage process. The designed SiC MOSFET gate driver has an area of 2967 μm × 3180 μm. The simulation verification model is based on Wolfspeed’s SiC MOSFET product C3M0075120D. Post-layout simulation results show that a SiC MOSFET gate driver with a crosstalk suppression capability of over 150 V/ns is obtained, which can reliably drive SiC MOSFET power devices.

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“…Therefore, the level shifter is usually used with additional negative crosstalk suppression circuits. A multi-level gate driver with both negative and zero-gate voltage is proposed which is achieved by an auxiliary MOSFET branch between the gate and source nodes of SiC MOSFET [25]- [26]. Negative gatesource voltage can reduce the positive crosstalk to prevent spurious turn-on.…”

Section: Introductionmentioning

confidence: 99%

“…However, the negative crosstalk voltage increases. To solve this problem, auxiliary transistor and capacitor are introduced and connected in parallel between the gate and Yes/Yes Medium Normal/Fast No Active [18], [20] No/Yes Medium Normal/Normal No Active [25], [26] Yes/Yes The rest of this paper is organized as follows. Sec.…”

Section: Introductionmentioning

confidence: 99%

A Transistor-Based Assist Gate Driver of SiC MOSFET for Crosstalk Suppression in a Phase-Leg Configuration

Xu,

Yang,

et al. 2023

IEEE Access

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Crosstalk in a phase-leg configuration significantly limits the high switching performance of silicon carbide (SiC) MOSFETs and results in additional switching loss, self-excited oscillation and even parasitic conduction. To give full play to the fast switching potential of SiC MOSFET, this paper proposes a negative voltage transistor-based assist gate driver (NVTAGD) to suppress the voltage spike caused by the communication. First, a simple circuit composed of capacitor, resistor and diode is applied to establish a negative gate-source voltage level. Then, two auxiliary transistors cooperate with capacitors and diodes to actively suppress the positive and negative gate-source voltage spike. The auxiliary transistor can flexibly adjust its working mode according to the operation states of the circuit without additional control signals. Finally, parameter design criteria of main components are also given to meet different operating conditions. A double-pulse experimental setup based on SCT3022AL SiC MOSFET is established to illustrate the effectiveness of the proposed method. The proposed NVTAGD generates a negative voltage of -2.3 V for the synchronous freewheeling device. And the positive and negative crosstalk voltage spike decreases by 52.6% and 44.9% respectively. Both positive and negative crosstalk voltages are limited by the safe range. A series of experimental results illustrate that the proposed method not only suppresses the crosstalk voltage but also increases the reliability of the devices.INDEX TERMS Crosstalk suppression, silicon carbide (SiC) MOSFET, assist gate driver, phase-leg configuration, auxiliary transistors

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A Multi-Level Gate Driver for Crosstalk Suppression of Silicon Carbide MOSFETs in Bridge Arm

Cited by 8 publications

References 29 publications

Modeling and Suppression of the Crosstalk Issue Considering the Influence of the Parasitic Parameters of SiC MOSFETs

Modeling and Suppression of the Crosstalk Issue Considering the Influence of the Parasitic Parameters of SiC MOSFETs

A High Crosstalk Suppression SiC MOSFET Gate Driver

A Transistor-Based Assist Gate Driver of SiC MOSFET for Crosstalk Suppression in a Phase-Leg Configuration

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