Proceedings of the 16th International Symposium on Power Semiconductor Devices &Amp;amp; IC's 2004
DOI: 10.1109/wct.2004.240347
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A multi trench analog+logic protection (M-TRAP) for substrate crosstalk prevention in a 0.25 /spl mu/m smart power platform with 100V high-side capability

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Cited by 16 publications
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“…In any case it is important to mention that some works have used TCAD as the main tool to develop protections for minority carriers injection in order to reduce the substrate cross-talk [3], [4]. Other options normally used to reduce the substrate parasitic couplings are based on technological modifications, like improved isolation structures or the use of Deep Trench Isolation (DTI) structures [5].…”
Section: Introductionmentioning
confidence: 99%
“…In any case it is important to mention that some works have used TCAD as the main tool to develop protections for minority carriers injection in order to reduce the substrate cross-talk [3], [4]. Other options normally used to reduce the substrate parasitic couplings are based on technological modifications, like improved isolation structures or the use of Deep Trench Isolation (DTI) structures [5].…”
Section: Introductionmentioning
confidence: 99%
“…Other types of DTI isolation based on multi-trench [12] or trench combined with junction isolation [13] are less efficient in terms of area consumption.…”
Section: Introductionmentioning
confidence: 99%