A Multiband Inductor-Reuse CMOS Low-Noise Amplifier

Tzeng, F.; Jahanian, A.; Heydari, Payam

doi:10.1109/tcsii.2008.918922

Cited by 24 publications

(18 citation statements)

References 6 publications

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“…Hence, a trade-off between the low-band gain and the high-band center frequency exists. Whereas the proposed system is not as selective as single-, narrow-band LNAs, the selectivity of the proposed system is comparable to previously published results found in [29], [32], [34]. Further, the selectivity will be improved by additional filtering that is already present in the RF front-end of many receivers.…”

Section: Measurement Resultssupporting

confidence: 80%

“…It is seen in Table II that the proposed system strikes a good balance between gain, noise figure, and power consumption. When compared to other dual-band LNAs, the proposed system has a power consumption that is only slightly higher than [24], [29] but well below the remaining dual-band systems. The linearity of the proposed system is second only to [32] and the noise figure and gain are similar to other proposed systems.…”

Section: Measurement Resultsmentioning

confidence: 88%

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A Dual-Band 2.45/6 GHz CMOS LNA Utilizing a Dual-Resonant Transformer-Based Matching Network

Neihart

Brown

2012

IEEE Trans. Circuits Syst. I

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This paper analyzes and presents design equations for a new transformer-based matching network capable of simultaneously matching two different frequencies. This network is then used to realize a dual-band low-noise amplifier that is fabricated in a 0.13 m CMOS process and is capable of operating at 2.45 GHz and 6 GHz. The measured and noise figure for 2.45 GHz (6 GHz) is 9.4 dB (18.9 dB) and 2.8 dB (3.8 dB), respectively. The IIP3 is measured to be and at 2.45 GHz and 6 GHz, respectively. The power consumption of the system (excluding the buffer) is 2.79 mW from a 1.2 V supply and the total area is m m.Index Terms-CMOS, low-noise amplifier (LNA), multistandard, reconfigurable.

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Section: Measurement Resultssupporting

confidence: 80%

Section: Measurement Resultsmentioning

confidence: 88%

A Dual-Band 2.45/6 GHz CMOS LNA Utilizing a Dual-Resonant Transformer-Based Matching Network

Neihart

Brown

2012

IEEE Trans. Circuits Syst. I

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“…Multi-standard LNA As shown in Fig. 2, the designed multi-standard LNA circuit topology adopts an inductor-degenerated common source structure [5][6][7], in which the proposed currentcontrolled active inductors are used for impedance matching with different standards.…”

Section: A Current-controled Active Inductormentioning

confidence: 99%

Design of Multi-standard Low Noise Amplifier based on Active Inductor

Wang¹,

Liang²,

Zhao³

et al. 2013

Proceedings of the 2nd International Conference on Computer Science and Electronics Engineering (ICCSEE 2013)

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Abstract-A current-controlled multi-standard low-noise amplifier (LNA) has been proposed based on the active inductor. The novel folded-cascode circuit topology with feedback resistance ensures good quality factor and linearity of the active inductor. The current-controlled inductance makes the LNA work well with various wireless communication standards such as TD-SCDMA, CDMA2000, WCDMA and Bluetooth. Simulation results indicate that the multi-standard LNA designed using 0.18 μm CMOS technology has a high gain (>11.6 dB), low noise figure (<1.851 dB), good input impedance matching (<-54.01 dB) and stable output impedance matching (<-26.78 dB).

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“…There are several ways of implementing a multiband or multistandard low-noise amplifier (LNA) [2][3][4][5][6][7][8]. A multiband or multistandard LNA circuit can be implemented by using a separate LNA for each frequency band, or directly designing a wideband LNA without or with embedded notch filters [2,3,6], or designing a concurrent dual-band or multiband LNA [4,5], or designing a band-switchable LNA which passband is switched by adjusting L or C values of LC resonator [7,8].…”

Section: Introductionmentioning

confidence: 99%

Single‐/multiband CMOS low‐noise amplifier using concentric switching inductors

Wang

Chen

Huang

2011

Micro & Optical Tech Letters

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In this article, a low‐noise amplifier (LNA) using concentric switching inductors were designed and measured. A voltage supply is fed through the switching inductors. The presented circuit is a modified cascoded amplifier configuration which input stage is a common‐gate structure. The switching inductors are implemented by three series‐wound concentric planar spiral inductors associated with two PMOSFET switches. According to on or off state of two PMOSFET switches, the circuit has theoretically four transfer characteristics, including one single‐band, two dual‐band, and one triple‐band frequency responses. For the LNA, using the concentric‐type switching inductors, the simulated and measured gains are nearly more than 12 and 10 dB at all operation frequency bands, respectively. The measured reflection coefficients are almost less than −10 dB at all operation frequency bands. The measured minimum noise figures are almost less than 4.5 dB at all operation frequency bands. The power consumption is 9 mW. The chip size is 1.03 × 1.04 mm2. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:309–315, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26591

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A Multiband Inductor-Reuse CMOS Low-Noise Amplifier

Cited by 24 publications

References 6 publications

A Dual-Band 2.45/6 GHz CMOS LNA Utilizing a Dual-Resonant Transformer-Based Matching Network

A Dual-Band 2.45/6 GHz CMOS LNA Utilizing a Dual-Resonant Transformer-Based Matching Network

Design of Multi-standard Low Noise Amplifier based on Active Inductor

Single‐/multiband CMOS low‐noise amplifier using concentric switching inductors

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